SSM6P3

SSM6P35AFE,LF vs SSM6P35AFE vs SSM6P35AFU

 
PartNumberSSM6P35AFE,LFSSM6P35AFESSM6P35AFU
DescriptionMOSFET P-CH X 2 VDSS:-20V VGSS:V ID:-
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage- 20 V--
Id Continuous Drain Current- 250 mA--
Rds On Drain Source Resistance1.4 Ohms--
Vgs th Gate Source Threshold Voltage- 0.3 V--
Vgs Gate Source Voltage- 4.5 V--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
SeriesSSM6P35AFE--
Transistor Type2 P-Channel--
BrandToshiba--
Fall Time145 ns--
Product TypeMOSFET--
Rise Time42 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time420 ns--
Typical Turn On Delay Time17 ns--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
SSM6P35AFU,LF MOSFET P-CH X 2 VDSS:-20V VGSS:V ID:-
SSM6P35AFE,LF MOSFET P-CH X 2 VDSS:-20V VGSS:V ID:-
SSM6P35FE,LM MOSFET Small-signal MOSFET P-Channel
SSM6P36FE Neu und Original
SSM6P36TU Neu und Original
SSM6P39TU Neu und Original
SSM6P35AFE Neu und Original
SSM6P35AFU Neu und Original
SSM6P35FE Neu und Original
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