PartNumber | SSM6P35AFE,LF | SSM6P35AFE | SSM6P35AFU |
Description | MOSFET P-CH X 2 VDSS:-20V VGSS:V ID:- | ||
Manufacturer | Toshiba | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-563-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | - 20 V | - | - |
Id Continuous Drain Current | - 250 mA | - | - |
Rds On Drain Source Resistance | 1.4 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | - 0.3 V | - | - |
Vgs Gate Source Voltage | - 4.5 V | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 250 mW | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Series | SSM6P35AFE | - | - |
Transistor Type | 2 P-Channel | - | - |
Brand | Toshiba | - | - |
Fall Time | 145 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 42 ns | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 420 ns | - | - |
Typical Turn On Delay Time | 17 ns | - | - |