 |  |  | |
| PartNumber | STB25NM60ND | STB25NM60N-1 | STB25NM60N |
| Description | MOSFET N-channel 600V, 21A FDMesh II | MOSFET N-CHANNEL MFT | MOSFET N-CH 600V 21A D2PAK |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-263-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 21 A | 20 A | - |
| Rds On Drain Source Resistance | 160 mOhms | 170 mOhms | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 160 W | 160 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tube | - |
| Height | 4.6 mm | 8.95 mm | - |
| Length | 10.4 mm | 10 mm | - |
| Series | STB25NM60N | STB25NM60N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.35 mm | 4.4 mm | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 40 ns | 24 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | 18 ns | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 50 ns | 94 ns | - |
| Typical Turn On Delay Time | 60 ns | 24.5 ns | - |
| Unit Weight | 0.139332 oz | 0.050717 oz | - |
| Forward Transconductance Min | - | 17 S | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STB25NM60ND | MOSFET N-channel 600V, 21A FDMesh II | |
| STB25NM60N-1 | MOSFET N-CHANNEL MFT | ||
| STB25NM60N | MOSFET N-CH 600V 21A D2PAK | ||
| STB25NM60N-1 | MOSFET N-CH 600V 21A I2PAK | ||
| STB25NM60ND | MOSFET N-CH 600V 21A D2PAK |