PartNumber | STB34N65M5 | STB34NM60N | STB34N50DM2AG |
Description | MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5 | MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS | MOSFET Automotive-grade N-channel 500 V, 0.10 Ohm typ., 26 A MDmesh DM2 Power MOSFET in a D2PAK package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | 500 V |
Id Continuous Drain Current | 18.3 A | 29 A | 26 A |
Rds On Drain Source Resistance | 110 mOhms | 92 mOhms | 120 mOhms |
Pd Power Dissipation | 190 W | - | 190 W |
Configuration | Single | Single | Single |
Tradename | MDmesh | MDmesh | MDmesh |
Packaging | Reel | Reel | Reel |
Series | STB34N65M5 | STB34NM60N | STB34N50DM2AG |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Vgs Gate Source Voltage | - | - | 30 V |
Qg Gate Charge | - | - | 44 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Channel Mode | - | - | Enhancement |
Qualification | - | - | AEC-Q101 |
Height | - | - | 4.6 mm |
Length | - | - | 10.4 mm |
Product | - | - | Power MOSFET |
Type | - | - | High Voltage |
Width | - | - | 9.35 mm |
Fall Time | - | - | 8.1 ns |
Rise Time | - | - | 11.5 ns |
Typical Turn Off Delay Time | - | - | 65.5 ns |
Typical Turn On Delay Time | - | - | 19.5 ns |