| PartNumber | STFI10LN80K5 | STFI10N62K3 | STFI10N65K3 |
| Description | MOSFET POWER MOSFET | RF Bipolar Transistors MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3 | MOSFET N-CH 650V 10A I2PAKFP |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | - | - |
| Packaging | Tube | Tube | - |
| Series | STFI10LN80K5 | N-channel MDmesh | - |
| Brand | STMicroelectronics | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.068784 oz | - | - |
| Package Case | - | I2PAKFP-3 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 30 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 31 ns | - |
| Rise Time | - | 15 ns | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 8.4 A | - |
| Vds Drain Source Breakdown Voltage | - | 620 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3.75 V | - |
| Rds On Drain Source Resistance | - | 680 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 41 ns | - |
| Typical Turn On Delay Time | - | 14.5 ns | - |
| Qg Gate Charge | - | 42 nC | - |
| Channel Mode | - | Enhancement | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STFI18N65M2 | MOSFET | |
| STFI13NM60N | MOSFET N-Ch 600V 0.28 Ohm 11A MDmesh II | ||
| STFI16N65M2 | MOSFET | ||
| STFI11N60M2-EP | MOSFET | ||
| STFI15N95K5 | MOSFET POWER MOSFET | ||
| STFI10LN80K5 | MOSFET POWER MOSFET | ||
| STFI13N65M2 | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in I2PAKFP package | ||
| STFI13N95K3 | MOSFET N-Ch 950 V 0.68 Ohm 10 A Zener-protect | ||
| STFI15NM65N | MOSFET N-CH 650V 0.35Ohm 12A MDmesh II | ||
| STFI13NK60Z | MOSFET N-Ch 600V 0.48 Ohm 13A SuperMESH | ||
| STFI10NK60Z | MOSFET N-Ch 600V 0.65 Ohm 10A SuperMESH | ||
| STFI12N60M2 | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in I2PAKFP package | ||
| STFI130N10F3 | MOSFET N-Ch 100 V 8 mOhm 46 A STripFET | ||
| STFI15N65M5 | MOSFET N-Ch 650 V 0.308 Ohm 11 A MDmesh(TM) M5 | ||
| STFI13N80K5 | Darlington Transistors MOSFET POWER MOSFET | ||
| STFI11N65M2 | Darlington Transistors MOSFET POWER MOSFET | ||
| STFI130N10F3 | RF Bipolar Transistors MOSFET N-Ch 100 V 8 mOhm 46 A STripFET | ||
| STFI13N60M2 | RF Bipolar Transistors MOSFET N-CH 600V 0.35Ohm 11A MDmesh II | ||
| STFI15NM65N | MOSFET N-CH 650V I2PAK-FP | ||
| STFI10N62K3 | RF Bipolar Transistors MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3 | ||
| STFI13NM60N | MOSFET N-CH 600V 11A I2PAK FP | ||
| STFI15N65M5 | RF Bipolar Transistors MOSFET N-Ch 650 V 0.308 Ohm 11 A MDmesh(TM) V | ||
| STFI14N80K5 | MOSFET N-CH 800V 12A I2PAKFP | ||
| STFI11NM65N | MOSFET N CH 650V 11A I2PAKFP | ||
| STFI15N95K5 | N-CHANNEL 950 V, 0.41 OHM TYP., | ||
| STFI10LN80K5 | MOSFET N-CH 800V 8A I2PAKFP | ||
| STFI10N65K3 | MOSFET N-CH 650V 10A I2PAKFP | ||
| STFI10NK60Z | MOSFET N-CH 600V 10A I2PAK FP | ||
| STFI12N60M2 | MOSFET N-CH 600V 9A I2PAK-FP | ||
| STFI13N65M2 | MOSFET N-CH 650V 10A I2PAKFP | ||
| STFI13N95K3 | MOSFET N CH 950V 10A I2PAKFP | ||
| STFI13NK60Z | MOSFET N-CH 600V 13A I2PAK FP | ||
| STFI15N60M2-EP | MOSFET N-CH 600V 11A I2PAKFP | ||
| STFI16N65M2 | MOSFET N-CH 650V I2PAK-FP | ||
| STFI18N65M2 | MOSFET N-CH 650V I2PAK-FP | ||
| STFI10N60M2 | Neu und Original | ||
| STFI13NM60N 2SK3569 | Neu und Original | ||
| STFI13NM60N,13NM60N | Neu und Original | ||
| STFI15N60M2EP | Power Field-Effect Transisto | ||
| STFI15N65M5 TK11A65 | Neu und Original |