STGB3

STGB30H60DLFB vs STGB30H60DFB vs STGB30H60DF

 
PartNumberSTGB30H60DLFBSTGB30H60DFBSTGB30H60DF
DescriptionIGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speedIGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speedIGBT 600V 60A 260W D2PAK
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseD2PAK-3D2PAK-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.55 V1.55 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation260 W260 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesSTGB30H60DLFBSTGB30H60DFB-
PackagingReelReel-
Continuous Collector Current Ic Max60 A60 A-
BrandSTMicroelectronicsSTMicroelectronics-
Gate Emitter Leakage Current+/- 250 nA+/- 250 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity10001000-
SubcategoryIGBTsIGBTs-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
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STGB3NB60HD Neu und Original
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