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STGB30H60DFB

STGB30H60DFB
Mfr. #:
STGB30H60DFB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGB30H60DFB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGB30H60DFB Mehr Informationen STGB30H60DFB Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
D2PAK-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.55 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
60 A
Pd - Verlustleistung:
260 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGB30H60DFB
Verpackung:
Spule
Kontinuierlicher Kollektorstrom Ic Max:
60 A
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Tags
STGB30H60, STGB30H, STGB30, STGB3, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2+Tab) D2PAK T/R
***i-Key
TRENCH GATE FIELD-STOP IGBT, HB
***ark
Ptd High Voltage
HB Series Trench Gate Field-Stop IGBTs
STMicroelectronics HB Series Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These new HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.Learn More
Teil # Mfg. Beschreibung Aktie Preis
STGB30H60DFB
DISTI # V36:1790_16116215		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.9696
  • 500000:$0.9712
  • 100000:$1.0610
  • 10000:$1.1960
  • 1000:$1.2180
STGB30H60DFB
DISTI # V72:2272_17630171		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    STGB30H60DFB
    DISTI # 497-16518-1-ND    		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, HB
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		987In Stock
    • 500:$1.5141
    • 100:$1.8429
    • 10:$2.2930
    • 1:$2.5500
    STGB30H60DFB
    DISTI # 497-16518-6-ND    		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, HB
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		987In Stock
    • 500:$1.5141
    • 100:$1.8429
    • 10:$2.2930
    • 1:$2.5500
    STGB30H60DFB
    DISTI # 497-16518-2-ND    		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, HB
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5000:$1.0920
    • 2000:$1.1340
    • 1000:$1.2180
    STGB30H60DFB
    DISTI # STGB30H60DFB    		STMicroelectronicsIGBTs (Alt: STGB30H60DFB)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 0
    • 10000:€0.9419
    • 6000:€1.0099
    • 4000:€1.0869
    • 2000:€1.1779
    • 1000:€1.4139
    STGB30H60DFB
    DISTI # STGB30H60DFB    		STMicroelectronicsIGBTs - Tape and Reel (Alt: STGB30H60DFB)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$1.0217
    • 18000:$1.0430
    • 12000:$1.0914
    • 6000:$1.1429
    • 3000:$1.1994
    STGB30H60DFB
    DISTI # 84Y8600    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$1.0000
    STGB30H60DFB.
    DISTI # 23AC9922    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 30000:$1.0300
    • 18000:$1.0500
    • 12000:$1.1000
    • 6000:$1.1500
    • 1:$1.2000
    STGB30H60DFB
    DISTI # 511-STGB30H60DFB    		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
    RoHS: Compliant    		0
    • 1:$2.3500
    • 10:$2.0000
    • 100:$1.6000
    • 500:$1.4000
    • 1000:$1.1600
    • 2000:$1.0800
    • 5000:$1.0400
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    STGB30H60DLFB

    Mfr.#: STGB30H60DLFB

    OMO.#: OMO-STGB30H60DLFB

    		 IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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    OMO.#: OMO-FCPF067N65S3

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    Mfr.#: RCS0603680RFKEA

    OMO.#: OMO-RCS0603680RFKEA

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    IKB40N65EF5ATMA1

    Mfr.#: IKB40N65EF5ATMA1

    OMO.#: OMO-IKB40N65EF5ATMA1-INFINEON-TECHNOLOGIES

    		 40A 650V TRENCHSTOP5 ULTRA FAST
    STGB30H60DLFB

    Mfr.#: STGB30H60DLFB

    OMO.#: OMO-STGB30H60DLFB-STMICROELECTRONICS

    		 TRENCH GATE FIELD-STOP IGBT, HB
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von STGB30H60DFB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,35 $
    2,35 $
    10
    2,00 $
    20,00 $
    100
    1,60 $
    160,00 $
    500
    1,40 $
    700,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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