STH

STH130N10F3-2 vs STH130N8F7-2 vs STH13009

 
PartNumberSTH130N10F3-2STH130N8F7-2STH13009
DescriptionMOSFET N-Ch 100V 7.8 mOhm 120 A STripFETMOSFET N-channel 80 V, 4.2 mOhm typ., 110 A STripFET F7 Power MOSFET in an H2PAK-2 packageBipolar Transistors - BJT HI VT FS SWCH PW TRN NPN
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETBipolar Transistors - BJT
RoHSYYY
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CaseH2PAK-2H2PAK-2TO-220-3
Transistor PolarityN-ChannelN-ChannelNPN
Vds Drain Source Breakdown Voltage100 V80 V-
Id Continuous Drain Current78 A110 A-
Rds On Drain Source Resistance9.3 mOhms4.2 mOhms-
Pd Power Dissipation250 W205 W100000 mW
TradenameSTripFETSTripFET-
PackagingReel-Tube
SeriesSTH130N10F3-2STH130N8F7-2STH13009
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETBJTs - Bipolar Transistors
Factory Pack Quantity1000100050
SubcategoryMOSFETsMOSFETsTransistors
Unit Weight0.139332 oz-0.081130 oz
Number of Channels-1 Channel-
Vgs th Gate Source Threshold Voltage-2.5 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-60 nC-
Minimum Operating Temperature-- 55 C- 65 C
Maximum Operating Temperature-+ 175 C+ 150 C
Configuration-SingleSingle
Channel Mode-Enhancement-
Transistor Type-1 N-Channel-
Fall Time-120 ns-
Rise Time-210 ns-
Typical Turn Off Delay Time-190 ns-
Typical Turn On Delay Time-140 ns-
Collector Emitter Voltage VCEO Max--400 V
Emitter Base Voltage VEBO--12 V
Maximum DC Collector Current--12 A
DC Current Gain hFE Max--18
Height--9.15 mm
Length--10.4 mm
Width--4.6 mm
DC Collector/Base Gain hfe Min--18 at 5 A, 5 V, 11 at 8 A, 5 V
  • Beginnen mit
  • STH 392
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
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