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| PartNumber | STH175N4F6-6AG | STH175N4F6-2AG | STH170N8F7-2 |
| Description | MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package | MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package | MOSFET N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | H2PAK-2 | H2PAK-2 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 80 V |
| Id Continuous Drain Current | 120 A | 120 A | 120 A |
| Rds On Drain Source Resistance | 1.9 mOhms | 1.9 mOhms | 3.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 4.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 130 nC | 130 nC | 120 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 150 W | 150 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | STripFET | STripFET | STripFET |
| Packaging | Reel | Reel | Reel |
| Series | STH175N4F6-6AG | STH175N4F6-2AG | STH170N8F7-2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 57 ns | 57 ns | 37 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 150 ns | 150 ns | 53 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 106 ns | 106 ns | 79 ns |
| Typical Turn On Delay Time | 24 ns | 24 ns | 38 ns |
| Unit Weight | 0.056438 oz | 0.139332 oz | 0.139332 oz |
| Height | - | - | 4.8 mm |
| Length | - | - | 15.8 mm |
| Product | - | - | Power MOSFET |
| Type | - | - | STripFET F7 |
| Width | - | - | 10.4 mm |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STH185N10F3-6 | MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package | |
| STH180N10F3-2 | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | ||
| STH175N4F6-6AG | MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package | ||
| STH185N10F3-2 | MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package | ||
| STH175N4F6-2AG | MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package | ||
| STH170N8F7-2 | MOSFET N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package | ||
| STH180N4F6-2 | MOSFET | ||
| STH180N10F3-2 | MOSFET N-CH 100V 120A H2PAK | ||
| STH185N10F3-2 | IGBT Transistors MOSFET POWER MOSFET | ||
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| STH180N4F6-2 | MOSFET N-CH 40V 120A H2PAK-2 | ||
| STH175N4F6-2AG | MOSFET N-CH 40V 120A H2PAK-2 | ||
| STH170N8F7-2 | MOSFET N-CH 80V 120A | ||
| STH185N10F3-6 | MOSFET N-CH 100V 180A H2PAK-6 | ||
| STH180N10F3-2-CUT TAPE | Neu und Original | ||
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| STH226065.1 | Neu und Original | ||
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| STH228023.1 | Neu und Original | ||
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