 |  | | |
| PartNumber | STI13005-1 | STI13NM60N | STI12NM50N |
| Description | Bipolar Transistors - BJT NPN Fast Switching 700V Power Trans | MOSFET N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK | MOSFET N-Ch, 500V-0.29ohms Mdmesh 11A |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | Bipolar Transistors - BJT | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | IPAK-3 | TO-262-3 | TO-262-3 |
| Transistor Polarity | NPN | N-Channel | N-Channel |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 400 V | - | - |
| Emitter Base Voltage VEBO | 9 V to 18 V | - | - |
| Collector Emitter Saturation Voltage | 5 V | - | - |
| Maximum DC Collector Current | 6 A | - | - |
| Minimum Operating Temperature | - 65 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | STI13005-1 | STI13NM60N | STI12NM50N |
| DC Current Gain hFE Max | 24 | - | - |
| Packaging | Tube | Tube | Tube |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Continuous Collector Current | 3 A | - | - |
| DC Collector/Base Gain hfe Min | 15 | - | - |
| Pd Power Dissipation | 30 W | 90 W | 100 W |
| Product Type | BJTs - Bipolar Transistors | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 1000 | 50 |
| Subcategory | Transistors | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | 0.050717 oz | 0.050717 oz |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Vds Drain Source Breakdown Voltage | - | 600 V | 500 V |
| Id Continuous Drain Current | - | 11 A | 11 A |
| Rds On Drain Source Resistance | - | 360 mOhms | 380 mOhms |
| Vgs Gate Source Voltage | - | 25 V | 25 V |
| Qg Gate Charge | - | 30 nC | - |
| Channel Mode | - | Enhancement | Enhancement |
| Tradename | - | MDmesh | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 10 ns | 14 ns |
| Rise Time | - | 8 ns | 15 ns |
| Typical Turn Off Delay Time | - | 30 ns | 60 ns |
| Typical Turn On Delay Time | - | 3 ns | 15 ns |
| Height | - | - | 8.95 mm |
| Length | - | - | 10 mm |
| Width | - | - | 4.4 mm |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STI150N10F7 | MOSFET N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package | |
| STI13005-1 | Bipolar Transistors - BJT NPN Fast Switching 700V Power Trans | ||
| STI13NM60N | MOSFET N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK | ||
| STI14NM50N | MOSFET N-Ch 500 V 0.28 Ohm 12 A MDmesh(TM) II | ||
| STI12NM50N | MOSFET N-Ch, 500V-0.29ohms Mdmesh 11A | ||
| STI14NM65N | MOSFET N-Ch, 650V-0.33ohms 12A | ||
| STI13005-1 | Bipolar Transistors - BJT NPN Fast Switching 700V Power Trans | ||
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