 |  |  | |
| PartNumber | STP13N60M2 | STP13N60DM2 | STP13N60M2 13N60M2 |
| Description | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | MOSFET | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V | - |
| Id Continuous Drain Current | 11 A | 11 A | - |
| Rds On Drain Source Resistance | 380 mOhms | 365 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 25 V | 10 V | - |
| Qg Gate Charge | 17 nC | 19 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 110 W | 110 W | - |
| Configuration | Single | Single | - |
| Tradename | MDmesh | - | - |
| Packaging | Tube | - | - |
| Series | STP13N60M2 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 9.5 ns | 10.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 4.8 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 41 ns | 42.5 ns | - |
| Typical Turn On Delay Time | 11 ns | 12.3 ns | - |
| Unit Weight | 0.011640 oz | - | - |
| Channel Mode | - | Enhancement | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STP13N60M2 | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | |
| STP13N60DM2 | MOSFET | ||
| STP13N60M2 | MOSFET N-CH 600V 11A TO-220 | ||
| STP13N60M2 13N60M2 | Neu und Original |