STP4N1

STP4N150 vs STP4N150 P4N150 vs STP4N100,4N100

 
PartNumberSTP4N150STP4N150 P4N150STP4N100,4N100
DescriptionMOSFET PowerMESH MOSFET
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.5 kV--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance5 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation160 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerMESH--
PackagingTube--
Height9.15 mm--
Length10.4 mm--
SeriesSTP4N150--
Transistor Type1 N-Channel--
TypePower MOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min3.5 S--
Fall Time45 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time35 ns--
Unit Weight0.011640 oz--
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STP4N150 MOSFET PowerMESH MOSFET
STP4N150 MOSFET N-CH 1500V 4A TO-220
STP4N150 P4N150 Neu und Original
STP4N100,4N100 Neu und Original
STP4N150,P4N150,4N150 Neu und Original
STP4N150,P4N150,4N150, Neu und Original
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