PartNumber | STQ1NK80ZR-AP | STQ1NK60ZR-AP |
Description | MOSFET N Ch 800V 13 Ohm 1A | MOSFET N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 600 V |
Id Continuous Drain Current | 300 mA | 300 mA |
Rds On Drain Source Resistance | 16 Ohms | 15 Ohms |
Vgs Gate Source Voltage | 30 V | 10 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 3 W | 3 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Ammo Pack | - |
Height | 4.95 mm | - |
Length | 4.95 mm | - |
Series | STQ1NK80ZR-AP | STQ1NK60ZR |
Transistor Type | 1 N-Channel | 1 N-Channel Power MOSFET |
Width | 3.94 mm | - |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 55 ns | 28 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 30 ns | 5 ns |
Factory Pack Quantity | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 22 ns | 13 ns |
Typical Turn On Delay Time | 8 ns | 5.5 ns |
Unit Weight | 0.007760 oz | 0.007760 oz |
Vgs th Gate Source Threshold Voltage | - | 3 V |
Qg Gate Charge | - | 4.9 nC |
Tradename | - | SuperMESH |
Forward Transconductance Min | - | 0.5 S |