STW26NM60N

STW26NM60N vs STW26NM60ND

 
PartNumberSTW26NM60NSTW26NM60ND
DescriptionMOSFET N-channel 600 V Mdmesh II PowerMOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current20 A21 A
Rds On Drain Source Resistance165 mOhms145 mOhms
Vgs th Gate Source Threshold Voltage2 V4 V
Vgs Gate Source Voltage10 V25 V
Qg Gate Charge60 nC54.6 nC
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation140 W190 W
ConfigurationSingleSingle
Channel ModeEnhancement-
TradenameMDmesh-
PackagingTubeTube
Height20.15 mm-
Length15.75 mm-
SeriesSTW26NM60NSTW26NM60ND
Transistor Type1 N-Channel Power MOSFET1 N-Channel
TypePower MOSFET-
Width5.15 mm-
BrandSTMicroelectronicsSTMicroelectronics
Fall Time50 ns27.5 ns
Product TypeMOSFETMOSFET
Rise Time25 ns14.5 ns
Factory Pack Quantity60030
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time85 ns69 ns
Typical Turn On Delay Time13 ns22 ns
Unit Weight1.340411 oz1.340411 oz
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STW26NM60N MOSFET N-channel 600 V Mdmesh II Power
STW26NM60ND MOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II
STW26NM60N MOSFET N-CH 600V 20A TO-247
STW26NM60ND MOSFET N-CH 600V 21A TO247
STW26NM60N 26NM60N Neu und Original
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