STY10

STY105NM50N vs STY100NM60N vs STY100NS20FD

 
PartNumberSTY105NM50NSTY100NM60NSTY100NS20FD
DescriptionMOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FETMOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FETMOSFET N-Ch 200 Volt 100 A
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseMax247-3Max247-3Max247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V200 V
Id Continuous Drain Current88 A74 A100 A
Rds On Drain Source Resistance22 mOhms29 mOhms24 mOhms
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage25 V25 V20 V
Pd Power Dissipation625 W625 W450 W
ConfigurationSingleSingleSingle
TradenameMDmeshMDmesh-
PackagingTubeTubeTube
SeriesSTY105NM50NSTY100NM60NSTY100NS20FD
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity600600600
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight1.340411 oz1.340411 oz1.340411 oz
Minimum Operating Temperature--- 65 C
Maximum Operating Temperature--+ 150 C
Channel Mode--Enhancement
Height--20.3 mm
Length--15.9 mm
Type--MOSFET
Width--5.3 mm
Fall Time--140 ns
Rise Time--140 ns
Typical Turn On Delay Time--42 ns
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STY105NM50N MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET
STY100NM60N MOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FET
STY100NS20FD MOSFET N-Ch 200 Volt 100 A
STY100NM60N MOSFET N CH 600V 98A MAX247
STY100NS20FD MOSFET N-CH 200V 100A MAX247
STY105NM50N MOSFET N-CH 500V 110A MAX247
STY1004 Neu und Original
STY100NM60N 100NM60N Neu und Original
STY10E143JC Neu und Original
STY10VTA Neu und Original
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