TJ80S

TJ80S04M3L(T6L1,NQ vs TJ80S04M3L vs TJ80S04M3L(T6L1NQ

 
PartNumberTJ80S04M3L(T6L1,NQTJ80S04M3LTJ80S04M3L(T6L1NQ
DescriptionMOSFET P-Ch MOS -80A -40V 100W 7770pF 0.0052
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance5.2 mOhms--
Pd Power Dissipation100 W--
ConfigurationSingle--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesTJ80S04M3L--
Transistor Type1 P-Channel--
Width5.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Unit Weight0.011993 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TJ80S04M3L(T6L1,NQ MOSFET P-Ch MOS -80A -40V 100W 7770pF 0.0052
TJ80S04M3L(T6L1,NQ MOSFET P-Ch MOS -80A -40V 100W 7770pF 0.0052
TJ80S04M3L Neu und Original
TJ80S04M3L(T6L1NQ Neu und Original
TJ80S04M3L(T6L1NQ-ND Neu und Original
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