 |  | | |
| PartNumber | TK10A60W,S4VX | TK10A60W | TK10A60W,S4VX(M |
| Description | MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 9.7 A | - | - |
| Rds On Drain Source Resistance | 327 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 20 nC | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK10A60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 5.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | - | - |
| Typical Turn On Delay Time | 45 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK10A60W,S4VX | MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC | |
| TK10A60W5,S5VX | MOSFET Power MOSFET N-Channel | ||
| TK10A60W | Neu und Original | ||
| TK10A60W,S4VX(M | Neu und Original | ||
| TK10A60W5 | Neu und Original | ||
| TK10A60WS4VX(M | Neu und Original | ||
| TK10A60W,S4VX | Darlington Transistors MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC | ||
| TK10A60WS4VX | MOSFET MOSFET N-CH 600V | ||
| TK10A60WS4VXM | Neu und Original | ||
| TK10A60W5S5VX-ND | Neu und Original | ||
| TK10A60WS4VX-ND | Neu und Original | ||
| TK10A60WS4X-ND | Neu und Original |