 |  | | |
| PartNumber | TK10A80W,S4X | TK10A80W,S4X(S | TK10A80WS4X-ND |
| Description | MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220SIS-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 9.5 A | - | - |
| Rds On Drain Source Resistance | 460 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 19 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 40 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Series | TK10A80W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 35 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 120 ns | - | - |
| Typical Turn On Delay Time | 65 ns | - | - |
| Unit Weight | 0.068784 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK10A80W,S4X | MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W | |
| TK10A80W,S4X(S | Neu und Original | ||
| TK10A80WS4X-ND | Neu und Original |