 |  |  | |
| PartNumber | TK12E80W,S1X | TK12E60W,S1VX | TK12J60U(F) |
| Description | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | MOSFET MOSFET DTMOS-II N-Ch 600V 12A |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-3PN-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | 600 V |
| Id Continuous Drain Current | 11.5 A | 11.5 A | 12 A |
| Rds On Drain Source Resistance | 380 mOhms | 300 mOhms | 400 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3.7 V | - |
| Vgs Gate Source Voltage | 20 V | 30 V | 30 V |
| Qg Gate Charge | 23 nC | 25 nC | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 165 W | 110 W | 144 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | DTMOSIV | DTMOSIV | - |
| Series | TK12E80W | TK12E60W | TK12J60U |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 11 ns | 5.5 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 40 ns | 23 ns | 30 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 130 ns | 85 ns | - |
| Typical Turn On Delay Time | 70 ns | 23 ns | - |
| Unit Weight | 0.063493 oz | 0.211644 oz | 0.245577 oz |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Height | - | 15.1 mm | 20 mm |
| Length | - | 10.16 mm | 15.5 mm |
| Width | - | 4.45 mm | 4.5 mm |
| Packaging | - | - | Tube |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK12E80W,S1X | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | |
| TK12E60W,S1VX | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | ||
| TK12Q60W,S1VQ | MOSFET DTMOSIV 600V 340mOhm 11.5A 100W 890pF | ||
| TK12J60U(F) | MOSFET MOSFET DTMOS-II N-Ch 600V 12A | ||
| TK12P60W,RVQ | MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC | ||
| TK12E60W,S1VX | Darlington Transistors MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | ||
| TK12Q60W,S1VQ | Darlington Transistors MOSFET DTMOSIV 600V 340mOhm 11.5A 100W 890pF | ||
| TK12J60U(F) | MOSFET MOSFET DTMOS-II N-Ch 600V 12A | ||
| TK12P60W,RVQ | MOSFET N CH 600V 11.5A DPAK | ||
| TK12V60W,LVQ | MOSFET N-Ch DTMOSIV 600 V 104W 890pF 11.5A | ||
| TK12P60W,RVQ(S | Trans MOSFET N-CH 600V 11.5A 3-Pin DPAK (Alt: TK12P60W,RVQ(S) | ||
| TK12X60U(TE24L,Q) | MOSFET MOSFET DTMOS-II N-Ch 600V 12A | ||
| TK12E80W | Neu und Original | ||
| TK12J60U | Neu und Original | ||
| TK12J60U,TK11A60D, | Neu und Original | ||
| TK12J60W | Neu und Original | ||
| TK12P60W | Neu und Original | ||
| TK12P60WRVQ(S | Neu und Original | ||
| TK12P6W | Neu und Original | ||
| TK12Q60W | Neu und Original | ||
| TK12Q60W,S1VQ(S | Neu und Original | ||
| TK12V60W | Neu und Original | ||
| TK12X53D | Neu und Original | ||
| TK12E60W,S1VX(S | Power MOSFET Drivers | ||
| TK12E60WS1VX | MOSFET POWER MOSFET TRANSISTOR | ||
| TK12E60WS1VXS | Neu und Original | ||
| TK12Q60WS1VQ | Trans MOSFET N 600V 11.5A 3-Pin IPAK Tube - Rail/Tube (Alt: TK12Q60W,S1VQ) | ||
| TK12V60W,LVQ(S | Power MOSFET Drivers | ||
| TK12J60UF | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
| TK12E60WS1VX-ND | Neu und Original | ||
| TK12E80WS1X-ND | Neu und Original | ||
| TK12J60UF-ND | Neu und Original | ||
| TK12P60WRVQCT-ND | Neu und Original | ||
| TK12P60WRVQDKR-ND | Neu und Original | ||
| TK12P60WRVQTR-ND | Neu und Original | ||
| TK12Q60WS1VQ-ND | Neu und Original | ||
| TK12V60WLVQCT-ND | Neu und Original | ||
| TK12V60WLVQDKR-ND | Neu und Original | ||
| TK12V60WLVQTR-ND | Neu und Original |