 |  | | |
| PartNumber | TK2Q60D(Q) | TK2Q60D | TK2Q60D(Q)-ND |
| Description | MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | PW-Mold2-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Rds On Drain Source Resistance | 4.3 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 60 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 7 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | TK2Q60D | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 2.3 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 200 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK2Q60D(Q) | MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | |
| TK2Q60D(Q) | IGBT Transistors MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | ||
| TK2Q60D | Neu und Original | ||
| TK2Q60D,K2Q60D | Neu und Original | ||
| TK2Q60DQ | Neu und Original | ||
| TK2Q60D(Q)-ND | Neu und Original |