PartNumber | TK31E60W,S1VX | TK31E60W | TK31E60W,K31E60W |
Description | MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC | Transistor: N-MOSFET, unipolar, 600V, 30.8A, 230W, TO220AB | |
Manufacturer | Toshiba | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 30.8 A | - | - |
Rds On Drain Source Resistance | 73 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 86 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 230 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | DTMOSIV | - | - |
Height | 15.1 mm | - | - |
Length | 10.16 mm | - | - |
Series | TK31E60W | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 4.45 mm | - | - |
Brand | Toshiba | - | - |
Fall Time | 8.5 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 32 ns | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 165 ns | - | - |
Typical Turn On Delay Time | 70 ns | - | - |
Unit Weight | 0.211644 oz | - | - |