TK31E60W

TK31E60W,S1VX vs TK31E60W vs TK31E60W,K31E60W

 
PartNumberTK31E60W,S1VXTK31E60WTK31E60W,K31E60W
DescriptionMOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nCTransistor: N-MOSFET, unipolar, 600V, 30.8A, 230W, TO220AB
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current30.8 A--
Rds On Drain Source Resistance73 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge86 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation230 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameDTMOSIV--
Height15.1 mm--
Length10.16 mm--
SeriesTK31E60W--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Fall Time8.5 ns--
Product TypeMOSFET--
Rise Time32 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time165 ns--
Typical Turn On Delay Time70 ns--
Unit Weight0.211644 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TK31E60W,S1VX MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
TK31E60W,S1VX Darlington Transistors MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
TK31E60W,S1VX(S MOSFET DTMOS4 600V/31A TO220, BG
TK31E60W,S1VX(S) MOSFETs
TK31E60W Transistor: N-MOSFET, unipolar, 600V, 30.8A, 230W, TO220AB
TK31E60W,K31E60W Neu und Original
TK31E60WS1VX Trans MOSFET N 600V 30.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: TK31E60W,S1VX)
TK31E60WS1VX(S Neu und Original
TK31E60WS1VX-ND Neu und Original
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