TK31V60

TK31V60W,LVQ vs TK31V60 vs TK31V60W

 
PartNumberTK31V60W,LVQTK31V60TK31V60W
DescriptionMOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN8x8-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current30.8 A--
Rds On Drain Source Resistance78 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge86 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation240 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameDTMOSIV--
PackagingReel--
Height0.85 mm--
Length8 mm--
SeriesTK31V60W--
Transistor Type1 N-Channel--
Width8 mm--
BrandToshiba--
Fall Time8.5 ns--
Product TypeMOSFET--
Rise Time32 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time165 ns--
Typical Turn On Delay Time70 ns--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TK31V60W5,LVQ MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A
TK31V60X,LQ MOSFET DTMOSIV-High Speed 600V 88mVGS=10V)
TK31V60W,LVQ MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A
TK31V60X,LQ MOSFET DTMOSIV-High Speed 600V 88mVGS=10V)
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