 |  | | |
| PartNumber | TK39A60W,S4VX | TK39A60W,S4VX(M | TK39A60W |
| Description | MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | MOSFET DTMOS4 600V/39A TO220, EA | |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 38.8 A | - | - |
| Rds On Drain Source Resistance | 55 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 110 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Packaging | Reel | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK39A60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 200 ns | - | - |
| Typical Turn On Delay Time | 80 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK39A60W,S4VX | MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | |
| TK39A60W,S4VX | IGBT Transistors MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | ||
| TK39A60W,S4VX(M | MOSFET DTMOS4 600V/39A TO220, EA | ||
| TK39A60W | Neu und Original | ||
| TK39A60WS4VX | MOSFET MOSFET TRAN DTMOS TO-220SIS | ||
| TK39A60WS4VX(M | Neu und Original | ||
| TK39A65W | Neu und Original | ||
| TK39A60WS4VX-ND | Neu und Original |