 |  | | |
| PartNumber | TK62J60W,S1VQ | TK62J60W | TK62J60W5 |
| Description | MOSFET N-Ch 61.8A 400W FET 600V 3500pF 180nC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3PN-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 61.8 A | - | - |
| Rds On Drain Source Resistance | 33 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 180 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 20 mm | - | - |
| Length | 15.5 mm | - | - |
| Series | TK62J60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 58 ns | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 310 ns | - | - |
| Typical Turn On Delay Time | 115 ns | - | - |
| Unit Weight | 0.245577 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK62J60W,S1VQ | MOSFET N-Ch 61.8A 400W FET 600V 3500pF 180nC | |
| TK62J60W | Neu und Original | ||
| TK62J60W5 | Neu und Original | ||
| TK62J60WS1VQ | Trans MOSFET N 600V 61.8A 3-Pin SC-65 Tube - Rail/Tube (Alt: TK62J60W,S1VQ) | ||
| TK62J60WS1VQ(O | Neu und Original | ||
| TK62J60WS1VQ-ND | Neu und Original |