 |  | | |
| PartNumber | TK65E10N1,S1X | TK65E10N1 | TK65E10N1,K65E10N1 |
| Description | MOSFET 100V N-Ch PWR FET 148A 192W 5400pF | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 148 A | - | - |
| Rds On Drain Source Resistance | 4 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 81 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 192 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 15.1 mm | - | - |
| Length | 10.16 mm | - | - |
| Series | TK65E10N1 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.45 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 26 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 19 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 85 ns | - | - |
| Typical Turn On Delay Time | 44 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK65E10N1,S1X | MOSFET 100V N-Ch PWR FET 148A 192W 5400pF | |
| TK65E10N1,S1X | IGBT Transistors MOSFET 100V N-Ch PWR FET 148A 192W 5400pF | ||
| TK65E10N1S1X | MOSFET 100V N-CH PWR FET 148A 192W | ||
| TK65E10N1 | Neu und Original | ||
| TK65E10N1,K65E10N1 | Neu und Original | ||
| TK65E10N1,S1X(S | Neu und Original | ||
| TK65E10N1S1X(S | Neu und Original | ||
| TK65E10N1S1X-ND | Neu und Original |