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| PartNumber | TK65G10N1,RQ | TK65G10N1 | TK65G10N1,RQ(S |
| Description | MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK | MOSFET POWER N-CH 136A D2PAK-3, RL | Trans MOSFET N-CH 100V 136A 3-Pin D2PAK (Alt: TK65G10N1,RQ(S) |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | D2PAK-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 136 A | - | - |
| Rds On Drain Source Resistance | 4.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 81 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 156 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 10.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK65G10N1 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 26 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 19 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 85 ns | - | - |
| Typical Turn On Delay Time | 44 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK65G10N1,RQ | MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK | |
| TK65G10N1,RQ | MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK | ||
| TK65G10N1 | MOSFET POWER N-CH 136A D2PAK-3, RL | ||
| TK65G10N1,RQ(S | Trans MOSFET N-CH 100V 136A 3-Pin D2PAK (Alt: TK65G10N1,RQ(S) | ||
| TK65G10N1RQ | MOSFET MOSFET TRAN DP(OS) | ||
| TK65G10N1RQ(S | Neu und Original | ||
| TK65G10N1RQCT-ND | Neu und Original | ||
| TK65G10N1RQDKR-ND | Neu und Original | ||
| TK65G10N1RQTR-ND | Neu und Original |