PartNumber | TN0604N3-G-P005 | TN0604N3-G | TN0604N3-G P014 |
Description | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 40V 0.75Ohm | MOSFET N-CH Enhancmnt Mode MOSFET |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 700 mA | 700 mA | 700 mA |
Rds On Drain Source Resistance | 1.6 Ohms | 750 mOhms | 1.6 Ohms |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Bulk | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Microchip Technology | Microchip Technology | Microchip Technology |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2000 | 1000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
Vgs th Gate Source Threshold Voltage | - | 600 mV | - |
Vgs Gate Source Voltage | - | 10 V | 20 V |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 740 mW | 740 mW |
Height | - | 5.33 mm | 5.33 mm |
Length | - | 5.21 mm | 5.21 mm |
Type | - | FET | - |
Width | - | 4.19 mm | 4.19 mm |
Forward Transconductance Min | - | 500 mS | - |
Fall Time | - | 20 ns | 20 ns |
Rise Time | - | 6 ns | 6 ns |
Typical Turn Off Delay Time | - | 25 ns | 25 ns |
Typical Turn On Delay Time | - | 10 ns | 10 ns |
Product | - | - | MOSFET Small Signal |