 |  | | |
| PartNumber | TN0610N3-G | TN0610N3-G P002 | TN0610N3-G P003 |
| Description | MOSFET 100V 1.5Ohm | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET | |
| Manufacturer | Microchip | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 500 mA | - | - |
| Rds On Drain Source Resistance | 1.5 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Bulk | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | FET | - | - |
| Brand | Microchip Technology | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Unit Weight | 0.016000 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip Technology |
TN0610N3-G-P003 | MOSFET N-CH Enhancmnt Mode MOSFET | |
| TN0610N3-G-P013 | MOSFET N-CH Enhancmnt Mode MOSFET | ||
| TN0610N3-G | MOSFET 100V 1.5Ohm | ||
| TN0610N3-G-P013 | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET | ||
| TN0610N3-G-P003 | MOSFET N-CH 100V 500MA TO92-3 | ||
| TN0610N3-G P014 | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET | ||
| TN0610N3-G P005 | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET | ||
| TN0610N3-G P002 | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET | ||
| TN0610N3-G | MOSFET N-CH 100V 500MA TO92-3 | ||
| TN0610N3-G P003 | Neu und Original |