TP0606N3-G

TP0606N3-G vs TP0606N3-G P005 vs TP0606N3-G P003

 
PartNumberTP0606N3-GTP0606N3-G P005TP0606N3-G P003
DescriptionMOSFET 60V 3.5OhmRF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochip Technology-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current320 mA--
Rds On Drain Source Resistance3.5 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancementEnhancement-
PackagingBulkReel-
Height5.33 mm--
Length5.21 mm--
Transistor Type1 P-Channel1 P-Channel-
TypeFET--
Width4.19 mm--
BrandMicrochip Technology--
Forward Transconductance Min300 mS--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.016000 oz0.016000 oz-
Package Case-TO-92-3-
Id Continuous Drain Current-- 320 mA-
Vds Drain Source Breakdown Voltage-- 60 V-
Rds On Drain Source Resistance-7 Ohms-
Hersteller Teil # Beschreibung RFQ
Microchip Technology
Microchip Technology
TP0606N3-G MOSFET 60V 3.5Ohm
TP0606N3-G-P002 MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G-P003 MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G P013 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G P005 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G P014 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G-P003 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G-P002 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G MOSFET P-CH 60V 320MA TO92-3
TP0606N3-G P003 Neu und Original
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