 | | | |
| PartNumber | TP65H035WSQA | TP65H035WS | TP65H050WS |
| Description | MOSFET GAN FET 650V 47.2A TO247 | MOSFET GAN FET 650V 46.5A TO247 | MOSFET GAN FET 650V 34A TO247 |
| Manufacturer | Transphorm | Transphorm | Transphorm |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | GaN Si | GaN Si | GaN Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 47.2 A | 46.5 A | 36 A |
| Rds On Drain Source Resistance | 41 mOhms | 41 mOhms | 60 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.4 V | 3.3 V | 3.3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 24 nC | 36 nC | 24 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 187 W | 156 W | 119 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Transphorm | Transphorm | Transphorm |
| Fall Time | 12 ns | 11.5 ns | 11 ns |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 14 ns | 13.5 ns | 11 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 98 ns | 98.5 ns | 86 ns |
| Typical Turn On Delay Time | 69 ns | 69 ns | 51 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Transphorm |
TP65H035WSQA | MOSFET GAN FET 650V 47.2A TO247 | |
| TP65H035WS | MOSFET GAN FET 650V 46.5A TO247 | ||
| TP65H050WS | MOSFET GAN FET 650V 34A TO247 | ||
| TP65H070LDG | MOSFET | ||
| TP65H070LSG | MOSFET |