TPN1100

TPN11003NL,LQ vs TPN11003NL vs TPN11003NL LQ

 
PartNumberTPN11003NL,LQTPN11003NLTPN11003NL LQ
DescriptionMOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSON-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current31 A--
Rds On Drain Source Resistance12.6 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation19 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3.1 mm--
SeriesTPN11003NL--
Transistor Type1 N-Channel--
Width3.1 mm--
BrandToshiba--
Fall Time1.9 ns--
Product TypeMOSFET--
Rise Time2.1 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time7.5 ns--
Unit Weight0.000705 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
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