TPN14

TPN14006NH,L1Q vs TPN14006NH vs TPN14

 
PartNumberTPN14006NH,L1QTPN14006NHTPN14
DescriptionMOSFET N-Ch 60V 1000pF 15nC 13.9mOhm 33A 30WMOSFET POWER N-CH TSON8, RL of 5000DISTRIBUTION BOARD, 3-PH, 125A, 42WAY
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSON-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current33 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation30 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3.1 mm--
SeriesTPN14006NH--
Transistor Type1 N-Channel--
Width3.1 mm--
BrandToshiba--
Fall Time5.5 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time18 ns--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TPN14006NH,L1Q MOSFET N-Ch 60V 1000pF 15nC 13.9mOhm 33A 30W
TPN14006NHL1QCT-ND Neu und Original
TPN14006NHL1QDKR-ND Neu und Original
TPN14006NHL1QTR-ND Neu und Original
TPN14006NH MOSFET POWER N-CH TSON8, RL of 5000
TPN14006NHL1Q(M Neu und Original
TPN140227 Neu und Original
TPN14006NH,L1Q MOSFET N-Ch 60V 1000pF 15nC 13.9mOhm 33A 30W
TPN14006NH,L1Q(M Trans MOSFET 60V 8-Pin TSON Advance
TPN14006NHL1Q Trans MOSFET N 60V 33A 8-Pin TSON - Tape and Reel (Alt: TPN14006NH,L1Q)
TPN14 DISTRIBUTION BOARD, 3-PH, 125A, 42WAY
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