TPS112

TPS1120DR vs TPS1120D vs TPS1120DG4

 
PartNumberTPS1120DRTPS1120DTPS1120DG4
DescriptionMOSFET Dual P-Ch Enh-Mode MOSFETMOSFET Dual P-Ch Enh-Mode MOSFETMOSFET Dual P-Ch Enh-Mode MOSFET
ManufacturerTexas InstrumentsTexas InstrumentsTexas Instruments
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOIC-8SOIC-8SOIC-8
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage15 V15 V15 V
Id Continuous Drain Current1.17 A1.17 A2.7 A
Rds On Drain Source Resistance180 mOhms180 mOhms180 mOhms
Vgs Gate Source Voltage2 V, - 15 V2 V, - 15 V2 V, - 15 V
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 125 C+ 125 C+ 125 C
Pd Power Dissipation840 mW840 mW840 mW
ConfigurationDualDualDual
Channel ModeEnhancementEnhancementEnhancement
PackagingReelTubeTube
Height1.75 mm1.75 mm1.75 mm
Length4.9 mm4.9 mm4.9 mm
ProductMOSFET Small SignalMOSFET Small SignalMOSFET Small Signal
SeriesTPS1120TPS1120TPS1120
Transistor Type2 P-Channel2 P-Channel2 P-Channel
TypePMOS SwitchesPMOS SwitchesDual P-Channel Enhancement-Mode
Width3.9 mm3.9 mm3.9 mm
BrandTexas InstrumentsTexas InstrumentsTexas Instruments
Fall Time10 ns10 ns10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns10 ns10 ns
Factory Pack Quantity25007575
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time13 ns13 ns13 ns
Typical Turn On Delay Time4.5 ns4.5 ns4.5 ns
Unit Weight0.002677 oz0.002677 oz0.002677 oz
Forward Transconductance Min--2.5 S
Hersteller Teil # Beschreibung RFQ
Texas Instruments
Texas Instruments
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