TSM3443

TSM3443CX6 RFG vs TSM3443CX6 vs TSM3443CX6 RF

 
PartNumberTSM3443CX6 RFGTSM3443CX6TSM3443CX6 RF
DescriptionMOSFET 20V P channel MOSFETMOSFET 20V P channel MOSFET
ManufacturerTaiwan SemiconductorTSC-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-26-6--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current15 A--
Rds On Drain Source Resistance48 mOhms--
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge6 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
ProductRectifiers--
Transistor Type1 P-Channel1 P-Channel-
BrandTaiwan Semiconductor--
Forward Transconductance Min11 S--
Fall Time25 ns25 ns-
Product TypeMOSFET--
Rise Time35 ns35 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns45 ns-
Typical Turn On Delay Time22 ns22 ns-
Part Aliases-RFG-
Package Case-SOT-26-6-
Pd Power Dissipation-2 W-
Vgs Gate Source Voltage-12 V-
Id Continuous Drain Current-- 4.7 A-
Vds Drain Source Breakdown Voltage-- 20 V-
Vgs th Gate Source Threshold Voltage-- 1.4 V-
Rds On Drain Source Resistance-60 mOhms-
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM3443CX6 RFG MOSFET 20V P channel MOSFET
TSM3443CX6 RFG Trans MOSFET P-CH 20V 4.7A 6-Pin SOT-26 T/R
TSM3443CX6 MOSFET 20V P channel MOSFET
TSM3443CX6 RF Neu und Original
TSM3443CX6PFG Neu und Original
TSM3443CX6RF Neu und Original
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