TSM3446

TSM3446CX6 RFG vs TSM3446CX6 vs TSM3446CX6 RF

 
PartNumberTSM3446CX6 RFGTSM3446CX6TSM3446CX6 RF
DescriptionMOSFET 20V N channel MosfetMOSFET 20V N channel MOSFET
ManufacturerTaiwan SemiconductorTSC-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-26-6--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5.3 A--
Rds On Drain Source Resistance27 mOhms--
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge12.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandTaiwan Semiconductor--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time4.6 ns--
Unit Weight0.000529 oz--
Package Case-SOT-26-6-
Vgs Gate Source Voltage-+/- 12 V-
Id Continuous Drain Current-5.3 A-
Vds Drain Source Breakdown Voltage-20 V-
Vgs th Gate Source Threshold Voltage-0.85 V-
Rds On Drain Source Resistance-33 mOhms-
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM3446CX6 RFG MOSFET 20V N channel Mosfet
TSM3446CX6 RFG MOSFET 20V N channel Mosfet
TSM3446CX6 MOSFET 20V N channel MOSFET
TSM3446CX6 RF Neu und Original
TSM3446CX6RF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TSM3446CX6RFG Neu und Original
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