PartNumber | TSM3N90CI C0G | TSM3N90CH C5G | TSM3N90CP ROG |
Description | MOSFET MOSFET, Single, N-Ch Planar, 900V, 2.5A | MOSFET 900V 2.5A N Channel Power Mosfet | MOSFET 900V 3A N Channel Power Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | SMD/SMT |
Package / Case | ITO-220-3 | TO-251-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 900 V | 900 V | 900 V |
Id Continuous Drain Current | 2.5 A | 2.5 A | 2.5 A |
Rds On Drain Source Resistance | 4.3 Ohms | 4.3 Ohms | 4.3 Ohms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 17 nC | 17 nC | 17 nC |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 32 W | 94 W | 94 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Reel |
Transistor Type | N-Channel Power MOSFET | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Forward Transconductance Min | 3 S | 3 S | 3 S |
Fall Time | 31 ns | 31 ns | 31 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 25 ns | 25 ns | 25 ns |
Factory Pack Quantity | 2000 | 3750 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 63 ns | 63 ns | 63 ns |
Typical Turn On Delay Time | 16 ns | 16 ns | 16 ns |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Unit Weight | - | 0.012102 oz | 0.139332 oz |