| PartNumber | TSM500P02DCQ RFG | TSM500P02CX RFG | TSM5055DCR RLG |
| Description | MOSFET 20V Dual P-Channel MOSFET | MOSFET 20V P channel Power Mosfet | MOSFET MOSFET, Dual, N-Ch Trench, 30V, 38A |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDFN-6 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 30 V |
| Id Continuous Drain Current | 4.7 A | 4.7 A | 38 A, 107 A |
| Rds On Drain Source Resistance | 42 mOhms | 57 mOhms | 8.8 mOhms, 2.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 300 mV | 600 mV | 1.2 V |
| Vgs Gate Source Voltage | 4.5 V | 4.5 V | 10 V |
| Qg Gate Charge | 9.6 nC | 9.6 nC | 9.3 nC, 49 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 620 mW | 1.56 W | 30 W, 69 W |
| Configuration | Single | Single | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 P-Channel | 1 P-Channel | Asymmetric Dual N-Channel Power MOSFET |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 13.8 ns | 13.8 ns | 14 ns, 49 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 21.6 ns | 21.6 ns | 65 ns, 79 ns |
| Factory Pack Quantity | 3000 | 3000 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 51 ns | 51 ns | 8.2 ns, 34 ns |
| Typical Turn On Delay Time | 6 ns | 6 ns | 4.8 ns, 11 ns |
| Unit Weight | - | 0.000282 oz | - |
| Forward Transconductance Min | - | - | 27 S, 47 S |
| Moisture Sensitive | - | - | Yes |