TSM9N9

TSM9N90ECI C0G vs TSM9N90CI C0G vs TSM9N90CZ C0

 
PartNumberTSM9N90ECI C0GTSM9N90CI C0GTSM9N90CZ C0
DescriptionMOSFET 900V 9Amp 1.4 N channel MosfetMOSFET 900V 9A N Channel Power MosfetMOSFET 900V 9A N Channel Mosfet
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseITO-220-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance1.13 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge72 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation89 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTubeTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandTaiwan Semiconductor--
Fall Time159 ns--
Product TypeMOSFET--
Rise Time97 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time212 ns--
Typical Turn On Delay Time52 ns--
Unit Weight0.059966 oz0.211644 oz0.211644 oz
Package Case-TO-220-3TO-220-3
Id Continuous Drain Current-9 A9 A
Vds Drain Source Breakdown Voltage-900 V900 V
Rds On Drain Source Resistance-1.4 Ohms1.4 Ohms
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM9N90ECI C0G MOSFET 900V 9Amp 1.4 N channel Mosfet
TSM9N90ECZ C0G MOSFET 900V 9Amp 1,4ohm N channel Mosfet
TSM9N90CI C0G MOSFET 900V 9A N Channel Power Mosfet
TSM9N90CZ C0 MOSFET 900V 9A N Channel Mosfet
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