PartNumber | TSM9N90ECI C0G | TSM9N90CI C0G | TSM9N90CZ C0 |
Description | MOSFET 900V 9Amp 1.4 N channel Mosfet | MOSFET 900V 9A N Channel Power Mosfet | MOSFET 900V 9A N Channel Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | ITO-220-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 900 V | - | - |
Id Continuous Drain Current | 9 A | - | - |
Rds On Drain Source Resistance | 1.13 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 72 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 89 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | - | - |
Fall Time | 159 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 97 ns | - | - |
Factory Pack Quantity | 2000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 212 ns | - | - |
Typical Turn On Delay Time | 52 ns | - | - |
Unit Weight | 0.059966 oz | 0.211644 oz | 0.211644 oz |
Package Case | - | TO-220-3 | TO-220-3 |
Id Continuous Drain Current | - | 9 A | 9 A |
Vds Drain Source Breakdown Voltage | - | 900 V | 900 V |
Rds On Drain Source Resistance | - | 1.4 Ohms | 1.4 Ohms |