OMO ElectronicOMO Electronic
Expand menu
0 Wagen

ZXMC3A17D

ZXMC3A17DN8 vs ZXMC3A17DN8TA-CUT TAPE vs ZXMC3A17DN8TA

 
PartNumberZXMC3A17DN8ZXMC3A17DN8TA-CUT TAPEZXMC3A17DN8TA
DescriptionMOSFET N and P ChannelIGBT Transistors MOSFET 30V Enhancement Mode
ManufacturerZETEX-Diodes Incorporated
Product CategoryFETs - Arrays-FETs - Arrays
Series--ZXMC3
Packaging--Digi-ReelR Alternate Packaging
Unit Weight--0.002610 oz
Mounting Style--SMD/SMT
Package Case--8-SOIC (0.154", 3.90mm Width)
Technology--Si
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--2 Channel
Supplier Device Package--8-SO
Configuration--Dual Dual Drain
FET Type--N and P-Channel
Power Max--1.25W
Transistor Type--1 N-Channel 1 P-Channel
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--600pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--4.1A, 3.4A
Rds On Max Id Vgs--50 mOhm @ 7.8A, 10V
Vgs th Max Id--1V @ 250μA (Min)
Gate Charge Qg Vgs--12.2nC @ 10V
Pd Power Dissipation--2.1 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--11.2 ns 8.7 ns
Rise Time--6.4 ns 2.9 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--5.4 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--65 mOhms
Transistor Polarity--N-Channel P-Channel
Typical Turn Off Delay Time--16 ns 29.2 ns
Typical Turn On Delay Time--2.9 ns 1.7 ns
Channel Mode--Enhancement
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated 		ZXMC3A17DN8TC MOSFET 30V Enhancement Mode
ZXMC3A17DN8 MOSFET N and P Channel
ZXMC3A17DN8TA-CUT TAPE Neu und Original
ZXMC3A17DN8TA IGBT Transistors MOSFET 30V Enhancement Mode
Top