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ZXMC3A17DN8TA

ZXMC3A17DN8TA
Mfr. #:
ZXMC3A17DN8TA
Hersteller:
Diodes Incorporated
Beschreibung:
IGBT Transistors MOSFET 30V Enhancement Mode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ZXMC3A17DN8TA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
ZXMC3A17DN8TA DatasheetZXMC3A17DN8TA Datasheet (P4-P6)ZXMC3A17DN8TA Datasheet (P7-P9)ZXMC3A17DN8TA Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Eingebaute Dioden
Produktkategorie
FETs - Arrays
Serie
ZXMC3
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.002610 oz
Montageart
SMD/SMT
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
8-SO
Aufbau
Dual Dual Drain
FET-Typ
N- und P-Kanal
Leistung max
1.25W
Transistor-Typ
1 N-Channel 1 P-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
600pF @ 25V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
4.1A, 3.4A
Rds-On-Max-Id-Vgs
50 mOhm @ 7.8A, 10V
Vgs-th-Max-Id
1V @ 250μA (Min)
Gate-Lade-Qg-Vgs
12.2nC @ 10V
Pd-Verlustleistung
2.1 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
11.2 ns 8.7 ns
Anstiegszeit
6.4 ns 2.9 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
5.4 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
65 mOhms
Transistor-Polarität
N-Kanal P-Kanal
Typische-Ausschaltverzögerungszeit
16 ns 29.2 ns
Typische-Einschaltverzögerungszeit
2.9 ns 1.7 ns
Kanal-Modus
Erweiterung
Tags
ZXMC3A17DN8T, ZXMC3A17D, ZXMC3A17, ZXMC3A1, ZXMC3A, ZXMC3, ZXMC, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8
***ical
Trans MOSFET N/P-CH 30V 4.1A/3.4A 8-Pin SOIC T/R
***des Inc SCT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N+P, 30V VDS, 20±V VGS
***(Formerly Allied Electronics)
MOSFET; N P channel; Dual; Enhance; 30V; SO8
***i-Key
MOSFET N/P-CHAN DUAL 30V 8SOIC
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, DUAL, NP, 30V, SO-8; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.4A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
IRF7303PBF Dual N-channel MOSFET Transistor; 4.9 A; 30 V; 8-Pin SOIC
***ure Electronics
Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC Tube
***klin Elektronik
INFINEON SMD MOSFET NFET 30V 4,9A 0,05Ω 150°C SO-8 IRF7303TRPBF
***fin
Transistor NPN Mos IRF7303/IRF7303PBF INTERNATIONAL RECTIFIER RoHS V=30 SO8
***roFlash
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Po
***ark
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes
***(Formerly Allied Electronics)
SI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.3 A; 6 A; 30V; 8-Pin SOIC
***et
Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R
***roFlash
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***(Formerly Allied Electronics)
IRF7313PBF Dual N-channel MOSFET Transistor; 6.5 A; 30 V; 8-Pin SOIC
***eco
Transistor MOSFET N Channel 30 Volt 6.5 .6 Amp 8 Pin SOIC Tape and Reel
***et
Transistor MOSFET Array Dual N-CH 30V 6.5A 8-Pin SOIC Tube
***ure Electronics
Dual N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8
***nell
MOSFET, DUAL, NN, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Di
***emi
N-Channel PowerTrenchTM MOSFET, Logic Level, 30V, 6.5A 38mΩ
***ure Electronics
N-Channel 30 V 38 mOhm Logic Level PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm;
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 40A; SMD Marking: FDS6630A; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V; Voltage Vgs th Min: 1V
***(Formerly Allied Electronics)
SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor; 5.9 A; 30 V; 8-Pin SOIC
***ure Electronics
Dual N-Channel 30 V 0.035 Ohms Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R / MOSFET 2N-CH 30V 6.9A 8-SOIC
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6900mA; On Resistance, Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, DUAL, N, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:4936; Current Id Max:6.9A; N-channel Gate Charge:4.5nC; On State Resistance @ Vgs = 4.5V:51mohm; On State resistance @ Vgs = 10V:35mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
ZXMC3A17DN8TA
DISTI # ZXMC3A17DN8TR-ND		Diodes IncorporatedMOSFET N/P-CH 30V 8SOIC
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		On Order
  • 500:$0.5852
ZXMC3A17DN8TA
DISTI # ZXMC3A17DN8CT-ND		Diodes IncorporatedMOSFET N/P-CH 30V 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 100:$0.7772
  • 10:$0.9830
  • 1:$1.1100
ZXMC3A17DN8TA
DISTI # ZXMC3A17DN8DKR-ND		Diodes IncorporatedMOSFET N/P-CH 30V 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 100:$0.7772
  • 10:$0.9830
  • 1:$1.1100
ZXMC3A17DN8TA
DISTI # ZXMC3A17DN8TA		Diodes IncorporatedTrans MOSFET N/P-CH 30V 5.4A/4.4A 8-Pin SO T/R - Tape and Reel (Alt: ZXMC3A17DN8TA)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$0.5219
  • 1000:$0.5199
  • 2000:$0.5189
  • 3000:$0.5179
  • 5000:$0.5169
ZXMC3A17DN8TA
DISTI # 62M1299		Diodes IncorporatedTrans MOSFET N/P-CH 30V 5.4A/4.4A 8-Pin SO T/R - Product that comes on tape, but is not reeled (Alt: 62M1299)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.0300
  • 10:$0.8900
  • 25:$0.8290
  • 50:$0.7660
  • 100:$0.7040
ZXMC3A17DN8TA
DISTI # 70438796		Diodes IncorporatedMOSFET,N P channel,Dual,Enhance,30V,SO8
RoHS: Compliant		0
  • 25:$1.3200
  • 125:$1.1600
  • 250:$1.0400
  • 500:$0.9500
ZXMC3A17DN8TA
DISTI # 522-ZXMC3A17DN8TA		Diodes IncorporatedMOSFET 30V Enhancement Mode
RoHS: Compliant		0
  • 1:$0.9200
  • 10:$0.7840
  • 100:$0.6030
  • 500:$0.5330
ZXMC3A17DN8TAZetex / Diodes Inc 331705
    ZXMC3A17DN8TA
    DISTI # 1471154    		Diodes IncorporatedMOSFET, DUAL, NP, 30V, SO-8
    RoHS: Compliant    		0
    • 5:£0.8790
    • 25:£0.7430
    • 100:£0.6040
    Bild Teil # Beschreibung
    ZXMC3AMCTA

    Mfr.#: ZXMC3AMCTA

    OMO.#: OMO-ZXMC3AMCTA

    		 MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS
    ZXMC3A17DN8TC

    Mfr.#: ZXMC3A17DN8TC

    OMO.#: OMO-ZXMC3A17DN8TC

    		 MOSFET 30V Enhancement Mode
    ZXMC3AM832TA

    Mfr.#: ZXMC3AM832TA

    OMO.#: OMO-ZXMC3AM832TA

    		 MOSFET Cmp 30V NP Ch UMOS
    ZXMC3A18DN8TA

    Mfr.#: ZXMC3A18DN8TA

    OMO.#: OMO-ZXMC3A18DN8TA

    		 MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE
    ZXMC3A17DN8

    Mfr.#: ZXMC3A17DN8

    OMO.#: OMO-ZXMC3A17DN8-1190

    		 MOSFET N and P Channel
    ZXMC3A18DN8

    Mfr.#: ZXMC3A18DN8

    OMO.#: OMO-ZXMC3A18DN8-1190

    		 Neu und Original
    ZXMC3A18DN8TC

    Mfr.#: ZXMC3A18DN8TC

    OMO.#: OMO-ZXMC3A18DN8TC-1190

    		 Neu und Original
    ZXMC3AMCTA

    Mfr.#: ZXMC3AMCTA

    OMO.#: OMO-ZXMC3AMCTA-DIODES

    		 Trans MOSFET N/P-CH 30V 3.7A/2.7A Automotive 8-Pin DFN EP T/R
    ZXMC3A16DN8QTA

    Mfr.#: ZXMC3A16DN8QTA

    OMO.#: OMO-ZXMC3A16DN8QTA-1190

    		 DIIZXMC3A16DN8QTA (Alt: ZXMC3A16DN8QTA)
    ZXMC3A18DN8TA

    Mfr.#: ZXMC3A18DN8TA

    OMO.#: OMO-ZXMC3A18DN8TA-DIODES

    		 MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von ZXMC3A17DN8TA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,63 $
    0,63 $
    10
    0,60 $
    5,98 $
    100
    0,57 $
    56,70 $
    500
    0,54 $
    267,75 $
    1000
    0,50 $
    504,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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