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| PartNumber | ZXMN3AM832TA | ZXMN3AMCTA |
| Description | MOSFET Dl 30V N Chnl UMOS | Darlington Transistors MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | FETs - Arrays |
| RoHS | T | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | MLP-8 | - |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 3.7 A | - |
| Rds On Drain Source Resistance | 180 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 3 W | - |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Digi-ReelR Alternate Packaging |
| Height | 1 mm | - |
| Length | 3 mm | - |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Type | MOSFET | - |
| Width | 2 mm | - |
| Brand | Diodes Incorporated | - |
| Fall Time | 2.9 ns | 2.9 ns |
| Product Type | MOSFET | - |
| Rise Time | 2.3 ns | 2.3 ns |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 6.6 ns | 6.6 ns |
| Typical Turn On Delay Time | 1.7 ns | 1.7 ns |
| Unit Weight | 0.010582 oz | - |
| Series | - | ZXMN3 |
| Package Case | - | 8-WDFN Exposed Pad |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount |
| Supplier Device Package | - | 8-DFN (3x2) |
| FET Type | - | 2 N-Channel (Dual) |
| Power Max | - | 1.7W |
| Drain to Source Voltage Vdss | - | 30V |
| Input Capacitance Ciss Vds | - | 190pF @ 25V |
| FET Feature | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | 2.9A |
| Rds On Max Id Vgs | - | 120 mOhm @ 2.5A, 10V |
| Vgs th Max Id | - | 3V @ 250μA |
| Gate Charge Qg Vgs | - | 3.9nC @ 10V |
| Pd Power Dissipation | - | 2.45 W |
| Vgs Gate Source Voltage | - | 20 V |
| Id Continuous Drain Current | - | 3.7 A |
| Vds Drain Source Breakdown Voltage | - | 30 V |
| Rds On Drain Source Resistance | - | 120 mOhms |
| Qg Gate Charge | - | 3.9 nC |
| Forward Transconductance Min | - | 3.5 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMN3AM832TA | MOSFET 2N-CH 30V 2.9A 8MLP | |
| ZXMN3AMCTA | Darlington Transistors MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS |