ZXMN6A08G

ZXMN6A08GTA vs ZXMN6A08GQTA vs ZXMN6A08GQTC

 
PartNumberZXMN6A08GTAZXMN6A08GQTAZXMN6A08GQTC
DescriptionMOSFET 60V 3.8A N-Channel MOSFETMOSFET MOSFET BVDSS 41V 60VMOSFET MOSFET BVDSS 41V 60V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-223-3SOT-223-4SOT-223-4
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current5.3 A5.3 A5.3 A
Rds On Drain Source Resistance80 mOhms80 mOhms80 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage10 V20 V20 V
Qg Gate Charge5.8 nC5.8 nC5.8 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation3.9 W3.9 W3.9 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height1.65 mm--
Length6.7 mm--
SeriesZXMN6A--
Transistor Type1 N-Channel--
Width3.7 mm--
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min6.6 S6.6 S6.6 S
Fall Time4.6 ns4.6 ns4.6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.1 ns2.1 ns2.1 ns
Factory Pack Quantity100010004000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time12.3 ns12.3 ns12.3 ns
Typical Turn On Delay Time2.6 ns2.6 ns2.6 ns
Unit Weight0.003951 oz0.003951 oz0.003951 oz
Qualification-AEC-Q101AEC-Q101
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN6A08GTA MOSFET 60V 3.8A N-Channel MOSFET
ZXMN6A08GQTA MOSFET MOSFET BVDSS 41V 60V
ZXMN6A08GQTC MOSFET MOSFET BVDSS 41V 60V
ZXMN6A08GTA-CUT TAPE Neu und Original
ZXMN6A08GQTA MOSFET MOSFET BVDSS 41V 60V
ZXMN6A08GQTC MOSFET MOSFET BVDSS 41V 60V
ZXMN6A08GTA Darlington Transistors MOSFET 60V 3.8A N-Channel MOSFET
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