ZXMP3A17

ZXMP3A17D vs ZXMP3A17DN8 vs ZXMP3A17DN8TA

 
PartNumberZXMP3A17DZXMP3A17DN8ZXMP3A17DN8TA
DescriptionMOSFET Dl 30V P-Chnl UMOS
ManufacturerZETEXDiodes IncorporatedDiodes Incorporated
Product CategoryFETs - ArraysIC ChipsIC Chips
Series-ZXMP3A17ZXMP3A17
Packaging-Digi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging
Unit Weight-0.002610 oz0.002610 oz
Mounting Style-SMD/SMTSMD/SMT
Package Case-8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Technology-SiSi
Operating Temperature--55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting Type-Surface MountSurface Mount
Number of Channels-2 Channel2 Channel
Supplier Device Package-8-SO8-SO
Configuration-Dual Dual DrainDual Dual Drain
FET Type-2 P-Channel (Dual)2 P-Channel (Dual)
Power Max-1.8W1.8W
Transistor Type-2 P-Channel2 P-Channel
Drain to Source Voltage Vdss-30V30V
Input Capacitance Ciss Vds-630pF @ 15V630pF @ 15V
FET Feature-Logic Level GateLogic Level Gate
Current Continuous Drain Id 25°C-3.4A3.4A
Rds On Max Id Vgs-70 mOhm @ 3.2A, 10V70 mOhm @ 3.2A, 10V
Vgs th Max Id-1V @ 250μA (Min)1V @ 250μA (Min)
Gate Charge Qg Vgs-15.8nC @ 10V15.8nC @ 10V
Pd Power Dissipation-2.1 W2.1 W
Maximum Operating Temperature-+ 150 C+ 150 C
Minimum Operating Temperature-- 55 C- 55 C
Fall Time-8.72 ns8.72 ns
Rise Time-2.87 ns2.87 ns
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-- 4.4 A- 4.4 A
Vds Drain Source Breakdown Voltage-- 30 V- 30 V
Rds On Drain Source Resistance-110 mOhms110 mOhms
Transistor Polarity-P-ChannelP-Channel
Typical Turn Off Delay Time-29.2 ns29.2 ns
Typical Turn On Delay Time-1.74 ns1.74 ns
Channel Mode-EnhancementEnhancement
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
ZXMP3A17E6TA MOSFET 30V P-Chnl UMOS
ZXMP3A17D Neu und Original
ZXMP3A17DN8 Neu und Original
ZXMP3A17E6 Neu und Original
ZXMP3A17E6TA Trans MOSFET P-CH 30V 4A Automotive 6-Pin SOT-23 T/R
ZXMP3A17E6TC Neu und Original
ZXMP3A17E6TA-CUT TAPE Neu und Original
ZXMP3A17DN8TA MOSFET Dl 30V P-Chnl UMOS
Top