| PartNumber | ZXMP6A16DN8TA | ZXMP6A16DN8QTA | ZXMP6A16DN8TC |
| Description | MOSFET Dl 60V P-Chnl UMOS | MOSFET Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF | MOSFET MOSFET BVDSS |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 3.9 A | 3.9 A | 2.9 A |
| Rds On Drain Source Resistance | 125 mOhms | 125 mOhms | 125 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.15 W | 2.15 W | 1.25 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.5 mm | - | - |
| Length | 5 mm | - | - |
| Series | ZXMC6A | ZXMN6 | ZXMP6A |
| Transistor Type | 2 P-Channel | 2 P-Channel | 2 P-Channel |
| Width | 4 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 10 ns | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4.1 ns | 4.1 ns | 4.1 ns |
| Factory Pack Quantity | 500 | 500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | 35 ns | 35 ns |
| Typical Turn On Delay Time | 3.5 ns | 3.5 ns | 3.5 ns |
| Unit Weight | 0.002610 oz | 0.002610 oz | 0.002610 oz |
| Vgs th Gate Source Threshold Voltage | - | 1 V | 1 V |
| Qg Gate Charge | - | 24.2 nC | 24.2 nC |
| Qualification | - | AEC-Q101 | - |
| Forward Transconductance Min | - | 7.2 S | 7.2 S |