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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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IPB026N06NATMA1 DISTI # 32904102 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 6000 |
|
IPB026N06N DISTI # 30579461 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-263 RoHS: Compliant | 1950 |
|
IPB026N06NATMA1 DISTI # 27065521 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 217 |
|
IPB026N06NATMA1 DISTI # IPB026N06NATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 25A TO263-3 Min Qty: 1 Container: Cut Tape (CT) | 901In Stock |
|
IPB026N06NATMA1 DISTI # IPB026N06NATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 25A TO263-3 Min Qty: 1 Container: Digi-Reel® | 901In Stock |
|
IPB026N06NATMA1 DISTI # IPB026N06NATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 25A TO263-3 Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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IPB026N06N DISTI # C1S322000411320 | Infineon Technologies AG | MOSFETs RoHS: Compliant Min Qty: 1 Container: Cut Tape | 1950 |
|
IPB026N06NATMA1 DISTI # V72:2272_06382953 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 217 |
|
IPB026N06NATMA1 DISTI # V36:1790_06382953 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
IPB026N06NATMA1 DISTI # IPB026N06NATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB026N06NATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
IPB026N06NATMA1 DISTI # 50Y2002 | Infineon Technologies AG | MOSFET Transistor, N Channel, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
IPB026N06NATMA1 DISTI # 726-IPB026N06NATMA1 | Infineon Technologies AG | MOSFET N-Ch 60V 100A D2PAK-2 RoHS: Compliant | 2127 |
|
IPB026N06N DISTI # 726-IPB026N06N | Infineon Technologies AG | MOSFET N-Ch 60V 100A D2PAK-2 RoHS: Compliant | 820 |
|
IPB026N06NATMA1 DISTI # 1785074 | Infineon Technologies AG | On a Reel of 1000, IPB026N06NATMA1 N-Channel MOSFET, 100 A, 60 V OptiMOS 5, 3-Pin D2PAK Infineon, RL Min Qty: 1000 Container: Reel | 0 |
|
IPB026N06NATMA1 DISTI # 2480797RL | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, TO-263-3 RoHS: Compliant | 0 |
|
IPB026N06NATMA1 DISTI # 2480797 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, TO-263-3 RoHS: Compliant | 585 |
|
IPB026N06NATMA1 DISTI # 2480797 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, TO-263-3 RoHS: Compliant | 615 |
|
IPB026N06NATMA1 DISTI # 2480797RL | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, TO-263-3 RoHS: Compliant | 0 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: IPB026N06NATMA1 OMO.#: OMO-IPB026N06NATMA1 |
MOSFET N-Ch 60V 100A D2PAK-2 | |
Mfr.#: IPB027N10N5ATMA1 OMO.#: OMO-IPB027N10N5ATMA1 |
MOSFET N-Ch 100V 120A D2PAK-2 | |
Mfr.#: IPB025N08N3GATMA1 OMO.#: OMO-IPB025N08N3GATMA1 |
MOSFET MV POWER MOS | |
Mfr.#: IPB027N10N3GATMA1 |
MOSFET N-CH 100V 120A TO263-3 | |
Mfr.#: IPB026N06N OMO.#: OMO-IPB026N06N-1190 |
MOSFET N-Ch 60V 100A D2PAK-2 | |
Mfr.#: IPB020NE7N3G OMO.#: OMO-IPB020NE7N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: IPB021N04NG OMO.#: OMO-IPB021N04NG-1190 |
Neu und Original | |
Mfr.#: IPB025N10N3G OMO.#: OMO-IPB025N10N3G-1190 |
Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: IPB025N10N3 G) | |
Mfr.#: IPB025N10N3GE8187ATMA1 |
MOSFET N-CH 100V 180A TO263-7 | |
Mfr.#: IPB029N06N3G OMO.#: OMO-IPB029N06N3G-1190 |
Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453052) |