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NGTB45N60S2WG

NGTB45N60S2WG
Mfr. #:
NGTB45N60S2WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors FSII 45A 600V Welding
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB45N60S2WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB45N60S2WG DatasheetNGTB45N60S2WG Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
NGTB45N60S2WG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
90 A
Pd - Verlustleistung:
300 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
45 A
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
1.340411 oz
Tags
NGTB45, NGTB4, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Single Transistor, 90 A, 2 V, 300 W, 600 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 90A 300000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 90A, TO-247-3; DC Collector Current: 90A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB45N60S2WG
DISTI # V99:2348_07291388		ON SemiconductorTrans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		11
  • 2500:$2.1010
  • 1000:$2.2070
  • 500:$2.6130
  • 250:$2.9100
  • 100:$3.0680
  • 10:$3.5310
  • 1:$4.5649
NGTB45N60S2WG
DISTI # NGTB45N60S2WGOS-ND		ON SemiconductorIGBT 45A 600V TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		113In Stock
  • 30:$3.7327
  • 10:$4.1480
  • 1:$4.6500
NGTB45N60S2WG
DISTI # 25863044		ON SemiconductorTrans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		11
  • 3:$4.5649
NGTB45N60S2WG
DISTI # NGTB45N60S2WG		ON SemiconductorTrans IGBT Chip N-CH 600V 90A 3-Pin TO-247 Rail - Bulk (Alt: NGTB45N60S2WG)
Min Qty: 143
Container: Bulk		Americas - 0
  • 1430:$2.0900
  • 286:$2.1900
  • 429:$2.1900
  • 715:$2.1900
  • 143:$2.2900
NGTB45N60S2WG
DISTI # NGTB45N60S2WG		ON SemiconductorTrans IGBT Chip N-CH 600V 90A 3-Pin TO-247 Rail (Alt: NGTB45N60S2WG)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€1.8900
  • 1000:€1.8900
  • 50:€1.9900
  • 100:€1.9900
  • 25:€2.0900
  • 10:€2.1900
  • 1:€2.2900
NGTB45N60S2WG
DISTI # 58Y3612		ON SemiconductorIGBT Single Transistor, 90 A, 2 V, 300 W, 600 V, TO-247, 3 RoHS Compliant: Yes0
    NGTB45N60S2WG
    DISTI # 863-NGTB45N60S2WG    		ON SemiconductorIGBT Transistors FSII 45A 600V Welding
    RoHS: Compliant    		150
    • 1:$4.1800
    • 10:$3.5500
    • 100:$3.0800
    • 250:$2.9200
    • 500:$2.6200
    • 1000:$2.2100
    • 2500:$2.1000
    NGTB45N60S2WGON SemiconductorInsulated Gate Bipolar Transistor
    RoHS: Compliant    		210
    • 1000:$2.3200
    • 500:$2.4400
    • 100:$2.5400
    • 25:$2.6500
    • 1:$2.8500
    NGTB45N60S2WG
    DISTI # 8829824P    		ON SemiconductorIGBT N-CH 600V 45A TO247, TU48
    • 100:£2.4250
    • 50:£2.5600
    • 20:£2.6150
    • 10:£2.6750
    NGTB45N60S2WG
    DISTI # 2492861    		ON SemiconductorIGBT, SINGLE, 600V, 90A, TO-247-3
    RoHS: Compliant    		25
    • 500:£2.1100
    • 250:£2.2900
    • 100:£2.4700
    • 10:£2.7200
    • 1:£3.2000
    NGTB45N60S2WGON Semiconductor45A,600V,IGBT3
    • 1:$3.7900
    • 100:$2.8400
    • 500:$2.4400
    • 1000:$2.2700
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    OMO.#: OMO-STM32F030K6T6

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    TPL0202-10MRTER

    Mfr.#: TPL0202-10MRTER

    OMO.#: OMO-TPL0202-10MRTER-TEXAS-INSTRUMENTS

    		 IC DGTL POT 256POS 10K DL 16WQFN
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    Mfr.#: STM32F030K6T6

    OMO.#: OMO-STM32F030K6T6-STMICROELECTRONICS

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    Mfr.#: B72510T300K62

    OMO.#: OMO-B72510T300K62-346

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    Verfügbarkeit
    Aktie:
    150
    Auf Bestellung:
    2133
    Menge eingeben:
    Der aktuelle Preis von NGTB45N60S2WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,18 $
    4,18 $
    10
    3,55 $
    35,50 $
    100
    3,08 $
    308,00 $
    250
    2,92 $
    730,00 $
    500
    2,62 $
    1 310,00 $
    1000
    2,21 $
    2 210,00 $
    2500
    2,10 $
    5 250,00 $
    5000
    2,02 $
    10 100,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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