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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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IPI029N06NAKSA1 DISTI # 29709233 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 1000 |
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IPI029N06NAKSA1 DISTI # IPI029N06NAKSA1-ND | Infineon Technologies AG | MOSFET N-CH 60V 24A TO262-3 RoHS: Compliant Min Qty: 1 Container: Tube | 407In Stock |
|
IPI029N06NAKSA1 DISTI # V36:1790_06382952 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 0 |
|
IPI029N06NAKSA1 DISTI # SP000962134 | Infineon Technologies AG | MV POWER MOS (Alt: SP000962134) RoHS: Compliant Min Qty: 50 | Europe - 56000 |
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IPI029N06NAKSA1 DISTI # IPI029N06NAKSA1 | Infineon Technologies AG | MV POWER MOS - Rail/Tube (Alt: IPI029N06NAKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
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IPI029N06NAKSA1 DISTI # IPI029N06NAKSA1 | Infineon Technologies AG | MV POWER MOS - Bulk (Alt: IPI029N06NAKSA1) RoHS: Compliant Min Qty: 500 Container: Bulk | Americas - 0 |
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IPI029N06NAKSA1 DISTI # 34AC1699 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:2.8V,Threshold Voltage Vgs:10V,Power RoHS Compliant: Yes | 407 |
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IPI029N06N DISTI # 726-IPI029N06N | Infineon Technologies AG | MOSFET N-Ch 60V 100A I2PAK-3 RoHS: Compliant | 422 |
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IPI029N06NAKSA1 DISTI # 726-IPI029N06NAKSA1 | Infineon Technologies AG | MOSFET N-Ch 60V 100A I2PAK-3 RoHS: Compliant | 301 |
|
IPI029N06NAKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 20868 |
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IPI029N06NAKSA1 DISTI # XSKDRABV0021253 | Infineon Technologies AG | PowerField-EffectTransistor,50AI(D),60V,0.0088ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-252AA RoHS: Compliant | 45000 in Stock0 on Order |
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IPI029N06NAKSA1 DISTI # 2781091 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, TO-262 RoHS: Compliant | 407 |
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IPI029N06NAKSA1 DISTI # 2781091 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, TO-262 | 407 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: GG0402055R042P OMO.#: OMO-GG0402055R042P |
TVS Diodes / ESD Suppressors SMP Diode 0402, 5vdc 5.0 pf,<12v clamp@1a | |
Mfr.#: LM4040B25IDBZR OMO.#: OMO-LM4040B25IDBZR |
Voltage References 2.5-V Precision Mcrpwr Shunt .2% acc | |
Mfr.#: STCH02 OMO.#: OMO-STCH02 |
AC/DC Converters Offline PWM quasi resonant controller for ultra-low standby power supplies | |
Mfr.#: STPS2H100ZFY OMO.#: OMO-STPS2H100ZFY |
Schottky Diodes & Rectifiers Automotive high voltage power Schottky rectifier | |
Mfr.#: 430773051825 OMO.#: OMO-430773051825 |
Tactile Switches WS-TASV 6 x 6 mm SMD Hrmtc Tct Swtch | |
Mfr.#: GG0402055R042P OMO.#: OMO-GG0402055R042P-AVX |
TVS DIODE 5V 16V 0402 | |
Mfr.#: STPS2H100ZFY |
DIODE SCHOTTKY 100V 2A SOD123F | |
Mfr.#: LM4040B25IDBZR |
Voltage References 2.5-V Precision Mcrpwr Shunt .2% acc | |
Mfr.#: STCH02 |
AC/DC Converters IND. & POWER CONV. | |
Mfr.#: LMK212BBJ476MG-T |
CAP CER 47UF 10V X5R 0805 |