 | |  | |
| PartNumber | IPI020N06NAKSA1 | IPI023NE7N3 G | IPI024N06N3GHKSA1 |
| Description | MOSFET N-Ch 60V 120A I2PAK-3 | MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 | MOSFET N-CH 60V 120A TO262-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 75 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 2 Ohms | 2.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.8 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 106 nC | 155 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 214 W | 300 W | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Product | OptiMOS Power | - | - |
| Series | OptiMOS 5 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 210 S | - | - |
| Fall Time | 19 ns | 22 nS | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 45 ns | 26 nS | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 51 ns | 70 nS | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Part # Aliases | IPI020N06N IPI2N6NXK SP000962132 | IPI023NE7N3GAKSA1 SP000641732 | - |
| Unit Weight | 0.084199 oz | 0.084199 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI020N06NAKSA1 | MOSFET N-Ch 60V 120A I2PAK-3 | |
| IPI024N06N3GXKSA1 | MOSFET N-Ch 60V 120A I2PAK-3 | ||
| IPI029N06N | MOSFET N-Ch 60V 100A I2PAK-3 | ||
| IPI029N06NAKSA1 | MOSFET N-Ch 60V 100A I2PAK-3 | ||
| IPI020N06NAKSA1 | MOSFET N-CH 60V 29A TO262-3 | ||
| IPI024N06N3GHKSA1 | MOSFET N-CH 60V 120A TO262-3 | ||
| IPI028N08N3GHKSA1 | MOSFET N-CH 80V 100A TO262-3 | ||
| IPI029N06NAKSA1 | Darlington Transistors MOSFET N-Ch 60V 100A I2PAK-3 | ||
| IPI023NE7N3 G | IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 | ||
| IPI024N06N3GXKSA1 | RF Bipolar Transistors MOSFET N-Ch 60V 120A I2PAK-3 | ||
Infineon Technologies |
IPI023NE7N3 G | MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 | |
| IPI024N06N3GXK | Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI024N06N3GXKSA1) | ||
| IPI020N06N | Neu und Original | ||
| IPI020N06NG | Neu und Original | ||
| IPI023NE7N3 | Neu und Original | ||
| IPI023NE7N3G | Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| IPI024N06N3 GS | Neu und Original | ||
| IPI024N06N3G | Trans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube (Alt: SP000680644) | ||
| IPI024N06N3GXKSA1 , 2SD2 | Neu und Original | ||
| IPI028N08N | Neu und Original | ||
| IPI028N08N3 | Neu und Original | ||
| IPI028N08N3 G | MOSFET N-Ch 80V 100A I2PAK-3 | ||
| IPI028N08N3G | Neu und Original | ||
| IPI028N08N3G,028N08N | Neu und Original | ||
| IPI029N06N | MOSFET N-Ch 60V 100A I2PAK-3 | ||
| IPI024N06N3 G | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 |