PartNumber | IPI020N06NAKSA1 | IPI023NE7N3 G | IPI024N06N3GHKSA1 |
Description | MOSFET N-Ch 60V 120A I2PAK-3 | MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 | MOSFET N-CH 60V 120A TO262-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-262-3 | TO-262-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 75 V | - |
Id Continuous Drain Current | 120 A | 120 A | - |
Rds On Drain Source Resistance | 2 Ohms | 2.3 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.8 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 106 nC | 155 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 214 W | 300 W | - |
Configuration | Single | Single | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Tube | Tube | - |
Height | 9.45 mm | 9.45 mm | - |
Length | 10.2 mm | 10.2 mm | - |
Product | OptiMOS Power | - | - |
Series | OptiMOS 5 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | OptiMOS 3 Power-Transistor | - | - |
Width | 4.5 mm | 4.5 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 210 S | - | - |
Fall Time | 19 ns | 22 nS | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 45 ns | 26 nS | - |
Factory Pack Quantity | 500 | 500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 51 ns | 70 nS | - |
Typical Turn On Delay Time | 24 ns | - | - |
Part # Aliases | IPI020N06N IPI2N6NXK SP000962132 | IPI023NE7N3GAKSA1 SP000641732 | - |
Unit Weight | 0.084199 oz | 0.084199 oz | - |