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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPI029N06NAKSA1 DISTI # 29709233 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 1000 |
|
| IPI029N06NAKSA1 DISTI # IPI029N06NAKSA1-ND | Infineon Technologies AG | MOSFET N-CH 60V 24A TO262-3 RoHS: Compliant Min Qty: 1 Container: Tube | 407In Stock |
|
| IPI029N06NAKSA1 DISTI # V36:1790_06382952 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 0 |
|
| IPI029N06NAKSA1 DISTI # SP000962134 | Infineon Technologies AG | MV POWER MOS (Alt: SP000962134) RoHS: Compliant Min Qty: 50 | Europe - 56000 |
|
| IPI029N06NAKSA1 DISTI # IPI029N06NAKSA1 | Infineon Technologies AG | MV POWER MOS - Rail/Tube (Alt: IPI029N06NAKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| IPI029N06NAKSA1 DISTI # IPI029N06NAKSA1 | Infineon Technologies AG | MV POWER MOS - Bulk (Alt: IPI029N06NAKSA1) RoHS: Compliant Min Qty: 500 Container: Bulk | Americas - 0 |
|
| IPI029N06NAKSA1 DISTI # 34AC1699 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:2.8V,Threshold Voltage Vgs:10V,Power RoHS Compliant: Yes | 407 |
|
| IPI029N06N DISTI # 726-IPI029N06N | Infineon Technologies AG | MOSFET N-Ch 60V 100A I2PAK-3 RoHS: Compliant | 422 |
|
| IPI029N06NAKSA1 DISTI # 726-IPI029N06NAKSA1 | Infineon Technologies AG | MOSFET N-Ch 60V 100A I2PAK-3 RoHS: Compliant | 301 |
|
| IPI029N06NAKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 20868 |
|
| IPI029N06NAKSA1 DISTI # XSKDRABV0021253 | Infineon Technologies AG | PowerField-EffectTransistor,50AI(D),60V,0.0088ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-252AA RoHS: Compliant | 45000 in Stock0 on Order |
|
| IPI029N06NAKSA1 DISTI # 2781091 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, TO-262 RoHS: Compliant | 407 |
|
| IPI029N06NAKSA1 DISTI # 2781091 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, TO-262 | 407 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IPI020N06NAKSA1 OMO.#: OMO-IPI020N06NAKSA1 |
MOSFET N-Ch 60V 120A I2PAK-3 |
|
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Mfr.#: IPI029N06NAKSA1 OMO.#: OMO-IPI029N06NAKSA1 |
MOSFET N-Ch 60V 100A I2PAK-3 |
|
|
Mfr.#: IPI023NE7N3 G OMO.#: OMO-IPI023NE7N3-G |
MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 |
|
Mfr.#: IPI020N06NAKSA1 |
MOSFET N-CH 60V 29A TO262-3 |
|
Mfr.#: IPI020N06NG OMO.#: OMO-IPI020N06NG-1190 |
Neu und Original |
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|
Mfr.#: IPI024N06N3G OMO.#: OMO-IPI024N06N3G-1190 |
Trans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube (Alt: SP000680644) |
|
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Mfr.#: IPI028N08N3 G OMO.#: OMO-IPI028N08N3-G-1190 |
MOSFET N-Ch 80V 100A I2PAK-3 |
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Mfr.#: IPI028N08N3GHKSA1 |
MOSFET N-CH 80V 100A TO262-3 |
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|
Mfr.#: IPI024N06N3 G OMO.#: OMO-IPI024N06N3-G-128 |
MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 |
|
|
Mfr.#: IPI024N06N3GXKSA1 |
RF Bipolar Transistors MOSFET N-Ch 60V 120A I2PAK-3 |
