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IPI029N06NAKSA1

IPI029N06NAKSA1
Mfr. #:
IPI029N06NAKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 100A I2PAK-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI029N06NAKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPI029N06NAKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
2.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
66 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
136 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Rohr
Höhe:
9.45 mm
Länge:
10.2 mm
Produkt:
OptiMOS-Leistung
Serie:
OptiMOS 5
Transistortyp:
1 N-Channel
Typ:
OptiMOS 3 Power-Transistor
Breite:
4.5 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
80 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
17 ns
Teil # Aliase:
IPI029N06N IPI29N6NXK SP000962134
Gewichtseinheit:
0.084199 oz
Tags
IPI02, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
***p One Stop Global
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262
***et
Trans MOSFET N-CH 60V 100A 3-Pin TO-262 Tube
***i-Key
MOSFET N-CH 60V 24A TO262-3
***ronik
N-CH 60V 100A 2,9mOhm TO262-3
***ark
Mosfet, N-Ch, 60V, 100A, To-262; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 60V, 100A, TO-262; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):2.8V; Tensione di Soglia Vgs:10V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPI029N06NAKSA1
DISTI # 29709233		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		1000
  • 500:$1.0464
  • 100:$1.1904
  • 15:$1.4880
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1-ND		Infineon Technologies AGMOSFET N-CH 60V 24A TO262-3
RoHS: Compliant
Min Qty: 1
Container: Tube		417In Stock
  • 1000:$0.9870
  • 500:$1.1912
  • 100:$1.5315
  • 10:$1.9060
  • 1:$2.1100
IPI029N06NAKSA1
DISTI # C1S322000334748		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		1000
  • 1000:$0.9020
  • 500:$1.1700
  • 100:$1.2800
  • 25:$1.5600
  • 5:$1.9200
IPI029N06NAKSA1
DISTI # SP000962134		Infineon Technologies AGMV POWER MOS (Alt: SP000962134)
RoHS: Compliant
Min Qty: 1		Europe - 56000
  • 1:€1.2629
  • 10:€0.9849
  • 25:€0.8799
  • 50:€0.8009
  • 100:€0.7769
  • 500:€0.7609
  • 1000:€0.7509
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1		Infineon Technologies AGMV POWER MOS - Rail/Tube (Alt: IPI029N06NAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$0.7129
  • 1000:$0.6869
  • 2000:$0.6619
  • 3000:$0.6399
  • 5000:$0.6279
IPI029N06NAKSA1
DISTI # 34AC1699		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:2.8V,Threshold Voltage Vgs:10V,Power RoHS Compliant: Yes459
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
IPI029N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant		20868
  • 1000:$1.1200
  • 500:$1.1800
  • 100:$1.2300
  • 25:$1.2800
  • 1:$1.3800
IPI029N06N
DISTI # 726-IPI029N06N		Infineon Technologies AGMOSFET N-Ch 60V 100A I2PAK-3
RoHS: Compliant		485
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
IPI029N06NAKSA1
DISTI # 726-IPI029N06NAKSA1		Infineon Technologies AGMOSFET N-Ch 60V 100A I2PAK-3
RoHS: Compliant		315
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
IPI029N06NAKSA1
DISTI # 2781091		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262
RoHS: Compliant		459
  • 1:£1.9300
  • 10:£1.5300
  • 100:£1.2300
  • 250:£1.0900
  • 500:£0.9560
IPI029N06NAKSA1
DISTI # 2781091		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262
RoHS: Compliant		459
  • 1:$3.4000
  • 10:$2.9600
  • 100:$2.4100
  • 250:$2.0400
  • 500:$1.7600
  • 1000:$1.6700
IPI029N06NAKSA1
DISTI # XSKDRABV0021253		INF 
RoHS: Compliant		500
  • 500:$1.4600
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 THERMISTOR, US SENSOR P
Verfügbarkeit
Aktie:
301
Auf Bestellung:
2284
Menge eingeben:
Der aktuelle Preis von IPI029N06NAKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,82 $
1,82 $
10
1,54 $
15,40 $
100
1,23 $
123,00 $
500
1,08 $
540,00 $
1000
0,90 $
898,00 $
2500
0,84 $
2 090,00 $
5000
0,80 $
4 025,00 $
10000
0,77 $
7 740,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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