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IPD60R600E6ATMA1

IPD60R600E6ATMA1
Mfr. #:
IPD60R600E6ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD60R600E6ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS E6
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
IPD60R600E6 SP001117094
Gewichtseinheit:
0.011993 oz
Tags
IPD60R600E, IPD60R60, IPD60R6, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    B***o
    B***o
    KH

    For Order No: 97663093130879 Order Closed: 25 Jan 2019 20:51 Seller: Fantasy Electronics CO., Ltd the product is 50PCS LM358DR SOP8 LM358 SOP LM358DT SOP-8 SMD LM358DR2G new and original IC=8 lots.-I have got enough products.-The seller told me the time of delivery from the very beginning to my country, this is very easy and very confident.-About merchandise sent is faster than expected.Thank you very much.

    2019-01-25
    P***V
    P***V
    BG

    ok

    2019-02-14
*** Source Electronics
MOSFET N-CH 600V 7.3A TO252 / Trans MOSFET N-CH 650V 7.3A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 600V, 7.3A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 63W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS E6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ure Electronics
Single N-Channel 600 V 500 Ohm 0.65 nC SIPMOS® Small Signal Mosfet - SOT-23
***ical
Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R
***ark
MOSFET, N-CH, 600V, 0.021A, 0.5W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 21 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 115 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 6.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
***ure Electronics
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
***ark
MOSFET, N-CH, 600V, 3.7A, SOT-223-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
***nell
MOSFET, N-CH, 600V, 3.7A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.7A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.89ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***Yang
Transistor MOSFET N-CH 600V 0.12A 4-Pin SOT-223 T/R - Tape and Reel
***ure Electronics
N-Channel 600 V 120 mA 1.8 W SMT SIPMOS Power-Transistor PG-SOT223-4
***ark
MOSFET, N-CH, 600V, 0.12A, 150DEG C/1.8W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:120mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 120 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 45 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 14.4 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
***emi
N-Channel Power MOSFET, QFET®, 600 V, 1 A, 11.5 Ω, DPAK
***ure Electronics
N-Channel 600 V 11.5 Ohm Surface Mount Mosfet - TO-252-3
***nell
MOSFET, N CH, 600V, 9.3OHM, 1A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:600V; On Resistance Rds(on):9.3ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:28W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***(Formerly Allied Electronics)
IRFRC20TRPBF N-channel MOSFET Transistor; 2 A; 600 V; 3-Pin TO-252
***ure Electronics
Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - DPAK (TO-252)
***ical
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
***enic
600V 2A 2.5W 4.4´Î@10V1.2A 4V@250Ã×A N Channel TO-252 MOSFETs ROHS
***S
French Electronic Distributor since 1988
***emi
N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK
***ure Electronics
N-Channel 600 V 1.9 A 4.7 Ohm Surface Mount Power Mosfet - TO-252-3
***ment14 APAC
MOSFET, N-CH, 600V, 1.9A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Source Voltage Vds:600V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
IPD60R600E6ATMA1
DISTI # V36:1790_16141095		Infineon Technologies AGTrans MOSFET N-CH 600V 7.3A T/R0
  • 2500000:$0.4689
  • 1250000:$0.4692
  • 250000:$0.5073
  • 25000:$0.5794
  • 2500:$0.5917
IPD60R600E6ATMA1
DISTI # IPD60R600E6ATMA1-ND		Infineon Technologies AGMOSFET N-CH 600V 7.3A TO252
RoHS: Compliant
Min Qty: 2500
Container: Bulk		Limited Supply - Call
  • 2500:$0.5917
IPD60R600E6ATMA1
DISTI # IPD60R600E6ATMA1		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600E6ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5109
  • 15000:$0.5199
  • 10000:$0.5379
  • 5000:$0.5589
  • 2500:$0.5789
IPD60R600E6ATMA1
DISTI # IPD60R600E6ATMA1		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R - Bulk (Alt: IPD60R600E6ATMA1)
RoHS: Compliant
Min Qty: 676
Container: Bulk		Americas - 0
  • 6760:$0.4699
  • 3380:$0.4779
  • 2028:$0.4949
  • 1352:$0.5129
  • 676:$0.5329
IPD60R600E6ATMA1
DISTI # SP001117094		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP001117094)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.4779
  • 15000:€0.5149
  • 10000:€0.5579
  • 5000:€0.6089
  • 2500:€0.7439
IPD60R600E6ATMA1
DISTI # 13AC9046		Infineon Technologies AGMOSFET, N-CH, 600V, 7.3A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7.3A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes563
  • 1000:$0.6100
  • 500:$0.7730
  • 250:$0.8240
  • 100:$0.8750
  • 50:$0.9600
  • 25:$1.0500
  • 10:$1.1300
  • 1:$1.3300
IPD60R600E6ATMA1
DISTI # 726-IPD60R600E6ATMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		2026
  • 1:$1.3200
  • 10:$1.1200
  • 100:$0.8660
  • 500:$0.7650
  • 1000:$0.6040
  • 2500:$0.5360
IPD60R600E6ATMA1Infineon Technologies AGPower Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252
RoHS: Compliant		5000
  • 1000:$0.4900
  • 500:$0.5100
  • 100:$0.5300
  • 25:$0.5600
  • 1:$0.6000
IPD60R600E6ATMA1
DISTI # 2726053		Infineon Technologies AGMOSFET, N-CH, 600V, 7.3A, TO-252-3
RoHS: Compliant		391
  • 100:$1.2600
  • 10:$1.5400
  • 1:$1.7700
IPD60R600E6ATMA1
DISTI # 2726053		Infineon Technologies AGMOSFET, N-CH, 600V, 7.3A, TO-252-31726
  • 500:£0.5260
  • 250:£0.5610
  • 100:£0.5950
  • 25:£0.7690
  • 5:£0.9450
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von IPD60R600E6ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,32 $
1,32 $
10
1,12 $
11,20 $
100
0,87 $
86,60 $
500
0,76 $
382,50 $
1000
0,60 $
604,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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